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author:

Yu, J.L. (Yu, J.L..) [1] | Cheng, S.Y. (Cheng, S.Y..) [2] | Lai, Y.F. (Lai, Y.F..) [3] | Chen, Y.H. (Chen, Y.H..) [4]

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EI

Abstract:

The mode splitting induced by electro-optic birefringence in an P-I-N InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser (VCSEL) has been studied by photocurrent difference spectroscopy (PCDS) at room temperature. The mode splitting, anisotropic broadening width, and the anisotropic integrated area of the two orthogonal polarized modes for a VCSEL device are determined. The mode splitting changes linearly with the injected current, which agree very well with theoretical calculations using a Jones matrix approach. It is demonstrated that the PCDS is a powerful tool to study the cavity anisotropy of a VCSEL device. © 2013 AIP Publishing LLC.

Keyword:

Aluminum compounds Anisotropy Birefringence Gallium compounds Indium compounds Laser pulses Semiconducting indium Semiconducting indium gallium arsenide Surface emitting lasers

Community:

  • [ 1 ] [Yu, J.L.]College of Physics and Information Engineering, Institute of Micro/Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350108, Fujian Province, China
  • [ 2 ] [Cheng, S.Y.]College of Physics and Information Engineering, Institute of Micro/Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350108, Fujian Province, China
  • [ 3 ] [Lai, Y.F.]College of Physics and Information Engineering, Institute of Micro/Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350108, Fujian Province, China
  • [ 4 ] [Chen, Y.H.]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China

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Source :

Journal of Applied Physics

ISSN: 0021-8979

Year: 2013

Issue: 3

Volume: 114

2 . 1 8 5

JCR@2013

2 . 7 0 0

JCR@2023

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

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Chinese Cited Count:

30 Days PV: 0

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