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author:

Ye, Yun (Ye, Yun.) [1] | Guo, Tai-Liang (Guo, Tai-Liang.) [2] | Jiang, Ya-Dong (Jiang, Ya-Dong.) [3] | Li, Wei-Zhi (Li, Wei-Zhi.) [4]

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Abstract:

In this paper, the influence of thermally poling and corona charging on electric properties of PVDF films was investigated by Fourier transform infrared (FTIR), differential scanning calorimetry (DSC), ferroelectric hysteresis loops and leakage current measurement. The results showed that the ferroelectric properties of PVDF films were both improved by thermally poling and corona charging, but the leakage properties of PVDF films were distinct due to different poling temperatures, poling electric fields and poling times. With the effect of high electric field at high temperature in thermally poling, the dipoles were oriented along the direction of electric field completely, which caused more polar β crystalline transited from non-polar α crystalline. So it was found that the crystalline degree, β crystalline content and remanent polarization of thermally poled PVDF films were higher than those of corona charged PVDF films. The reason that caused leakage current was also analyzed. The space charges injected during the poling process were stored in the shallow traps of PVDF films for corona poling and in the deep traps for thermally poling, respectively. Therefore, the leakage current of corona poled PVDF was unstable than that of thermally poled PVDF films.

Keyword:

Crystalline materials Differential scanning calorimetry Electric corona Electric fields Ferroelectric films Ferroelectricity Fourier transform infrared spectroscopy Leakage currents

Community:

  • [ 1 ] [Ye, Yun]College of Physics and Telecommunication Engineering, Fuzhou University, Fuzhou 350002, China
  • [ 2 ] [Guo, Tai-Liang]College of Physics and Telecommunication Engineering, Fuzhou University, Fuzhou 350002, China
  • [ 3 ] [Jiang, Ya-Dong]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • [ 4 ] [Li, Wei-Zhi]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

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Source :

Journal of the University of Electronic Science and Technology of China

ISSN: 1001-0548

Year: 2012

Issue: 3

Volume: 41

Page: 463-466

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 6

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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