Direct growth of transparent graphene electrodes on GaN LEDs using metal proximity catalytic effect - Details

author：

Xiong, Fangzhu (Xiong, Fangzhu.) ^[1] | Guo, Weiling (Guo, Weiling.) ^[2] | Wang, Le (Wang, Le.) ^[3] | Du, Zaifa (Du, Zaifa.) ^[4] | Sun, Jie (Sun, Jie.) ^[5] (Scholars：孙捷)

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Abstract：

High-quality　graphene　was　obtained　directly　on　GaN　epiwafers　at　low　temperature　using　the　metal　proximity　catalytic　effect.　Metal　catalyse　graphene　without　contacting　with　it　ensure　high　performance　of　graphene-GaN　LED.　©　OSA　2021,　©　2021　The　Author(s)

Keyword：

Gallium nitride Graphene Graphite electrodes III-V semiconductors Light emitting diodes Temperature Transparent electrodes

Community：

[ 1 ] [Xiong, Fangzhu]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Guo, Weiling]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 3 ] [Wang, Le]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Du, Zaifa]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Sun, Jie]National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China

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Related Keywords：

Direct Growth of Transparent Graphene Electrodes on GaN LEDs Using Metal Proximity Catalytic Effect
2021，2021 Conference on Lasers and Electro-Optics, CLEO 2021
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Source ：

Year： 2021

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

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Chinese Cited Count：

30 Days PV： 1

Affiliated Colleges：

物理与信息工程学院、微电子学院本学院/部未明确归属的数据

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