A　novel　resonant　gate　driving　circuit　for　a　pair　of　complementary　power　MOSFETs　was　proposed.　Operational　principle,　circuit　characteristics　and　design　criteria　for　the　key　circuit　parameters　were　investigated.　Simulation　and　prototype　were　also　set　up.　The　circuit　is　constituted　of　one　transformer　and　six　semiconductor　devices,　and　similar　to　a　flyback　converter.　The　analysis　shows　that　the　driving　circuit　possesses　the　advantages　such　as　few　components,　simple　control,　low　driving　losses,　fast　driving　speed　and　soft　switching　etc.　The　simulation　and　experimental　results　verify　the　analysis.　©　2011　Chin.　Soc.　for　Elec.　Eng.