The　precursor　of　silicon　carbide　(SiC)　was　obtained　by　sol-gel　methods　in　which　used　tetraethoxysilane　as　silicon　source　and　starch　as　carbon　source,　and　then　the　oxalic　acid　and　nickel　nitrate　were　added　respectively　as　catalyst　for　hydrolysis　and　polymeration　reactions.　The　obtained　precursor　was　used　to　prepare　SiC　by　carbothermal　reduction　in　the　Ar　flow.　The　samples　were　characterized　by　X-ray　diffraction,　Fourier　transform　infrared　(FTIR)　spectroscopy,　scanning　electron　microscope,　transmission　electron　microscope,　and　low-temperature　nitrogen　adsorption-desorption　measurement.　The　results　showed　that　the　carbothermal　temperature　for　synthesizing　SiC　needed　to　be　at　1450°C　when　the　nickel　nitrate　was　employed　in　the　precursor.　At　this　temperature,　the　obtained　sample　is　composed　of　agglomerated　regular　grains　with　size　ranging　from　40-60　nm　and　has　a　high　specific　surface　area　of　127.5　m2/g　and　the　main　pore　diametre　size　center　at　4.2　and　10.6　nm.