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author:

Xin, Qi (Xin, Qi.) [1] (Scholars:辛琦) | Li, Wenlian (Li, Wenlian.) [2] | Li, Tianle (Li, Tianle.) [3] | Su, Wenming (Su, Wenming.) [4] | Sun, Xiaoyan (Sun, Xiaoyan.) [5]

Indexed by:

EI Scopus PKU CSCD

Abstract:

In order to improve brightness and efficiency of red organic light emitting devices (OLEDs), highly efficient red tandem OLEDs have been fabricated by using AlQ3:Mg/WO3 as interconnecting layer. The optimal device whose efficiency and luminance reach three times efficiency and four time of that of a conventional single-unit device respectively, is obtained by controling WO3 thickness. The device is fabricated by Eu(DBM)3 bath and DCJTI units, with a structure of ITO/TPD/DCJTI:CBP/BCP/Alq3/Alq3: Mg/WO3/TPD/Eu(DBM)3 bath:TPD/Eu(DBM) 3 bath/LiF/Al and the maximum luminance of 8609 cd/m2 and the maximum efficiency of 10.2 cd/A are achieved.

Keyword:

Current density Efficiency Europium compounds Luminance Optical devices Organic light emitting diodes (OLED) Tungsten compounds

Community:

  • [ 1 ] [Xin, Qi]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
  • [ 2 ] [Xin, Qi]Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
  • [ 3 ] [Li, Wenlian]Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
  • [ 4 ] [Li, Tianle]Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
  • [ 5 ] [Su, Wenming]Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
  • [ 6 ] [Sun, Xiaoyan]Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

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Source :

Acta Optica Sinica

ISSN: 0253-2239

CN: 31-1252/O4

Year: 2008

Issue: 10

Volume: 28

Page: 2002-2005

1 . 6 0 0

JCR@2023

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 4

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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