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author:

Chen, Guang-Hong (Chen, Guang-Hong.) [1] | Yu, Ying (Yu, Ying.) [2] | Luo, Zhong-Zi (Luo, Zhong-Zi.) [3] | Wu, Qing-Xin (Wu, Qing-Xin.) [4]

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Abstract:

The performance of AZ5214E image-reversal photoresist was studied and achieves negative sidewalls when choosing proper processes. They are good for lift-off technics. It could be used to lift off 2 μm Au for the facture of RF MEMS switch. The negative sidewalls can be observed with SEM.

Keyword:

Crosslinking Integrated circuit manufacture Microelectromechanical devices Photoresists Switching circuits

Community:

  • [ 1 ] [Chen, Guang-Hong]Dept. of Electron. Sci. and Technol., Fuzhou Univ., Fuzhou 350002, China
  • [ 2 ] [Yu, Ying]Dept. of Electron. Sci. and Technol., Fuzhou Univ., Fuzhou 350002, China
  • [ 3 ] [Luo, Zhong-Zi]Pen Tung Sah MEMS Res. Ctr., Xiamen Univ., Xiamen 361005, China
  • [ 4 ] [Wu, Qing-Xin]Dept. of Electron. Sci. and Technol., Fuzhou Univ., Fuzhou 350002, China

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Source :

Journal of Functional Materials

ISSN: 1001-9731

CN: 50-1099/TH

Year: 2005

Issue: 3

Volume: 36

Page: 431-433,440

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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