Effect of Thin SiO2 Layer on Silicon-on-Glass Anodic Bonding - Details

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EI Scopus

Abstract：

this　paper　reported　the　effect　of　SiO2　on　the　silicon-on-glass　anodic　bonding　theoretically　and　experimentally　for　the　first　time.　Silicon　glass　bonding　mechanism　based　on　soft　break-down　of　SiO2　is　established　and　demonstrated.　The　electrical　model　of　Si-SiO2-Glass　anodic　bonding　stated　clearly　that　anodic　bonding　voltage　must　be　higher　than　the　break-down　voltage　of　SiO2　to　start　bonding.　The　break-down　voltage　of　SiO2　is　proportional　to　its　thickness.　Bonding　strength　is　finally　extracted　by　a　customized　on-chip　testing　device.　It　is　found　that　the　thin　SiO2　layer　on　the　silicon　surface　affects　the　bonding　strength　seriously.　The　bonding　strength　of　anodic　bonding　with　SiO2　layer　is　25%　stronger　than　that　of　typical　Si-Glass　anodic　bonding　near　the　periphery　of　the　silicon　wafer,　and　8%　stronger　than　that　of　typical　Si-Glass　anodic　bonding　in　the　central　region　of　the　silicon　wafer.　©　2019　IEEE.

Keyword：

Glass Glass bonding Nanotechnology Silica Silicon oxides Silicon wafers Wafer bonding

Community：

[ 1 ] [Chen, Zikun]Fuzhou University, College of Physics and Information Engineering, Fujian; 350002, China
[ 2 ] [Gao, Chengwu]Fuzhou University, College of Physics and Information Engineering, Fujian; 350002, China
[ 3 ] [Guan, Taotao]Fuzhou University, College of Physics and Information Engineering, Fujian; 350002, China
[ 4 ] [Yang, Fang]Fuzhou University, College of Physics and Information Engineering, Fujian; 350002, China
[ 5 ] [Shi, Longzhao]Fuzhou University, College of Physics and Information Engineering, Fujian; 350002, China
[ 6 ] [Zhang, Dacheng]Fuzhou University, College of Physics and Information Engineering, Fujian; 350002, China