Proximity　effect　is　one　of　the　most　tremendous　consequences　that　produces　unacceptable　exposures　during　electron　beam　lithography　(EBL),　and　thus　distorting　the　layout　pattern.　In　this　paper,　we　propose　the　first　work　which　considers　the　proximity　effect　during　layout　stage.　We　first　give　an　accurate　evaluation　scheme　to　estimate　the　proximity　effect　by　fast　Gauss　transform.　Then,　we　devote　a　proximity　effect　aware　detailed　placement　objective　function　to　simultaneously　consider　wirelength,　density　and　proximity　effect.　Furthermore,　cell　swapping　and　cell　matching　based　methods　are　used　to　optimize　the　objective　function　such　that　there　is　no　overlap　among　cells.　Compared　with　a　state-of-the-art　work,　experimental　result　shows　that　our　algorithm　can　efficiently　reduce　the　proximity　variations　and　maintain　high　wirelength　quality　at　a　reasonable　runtime.　©　The　Authors,　published　by　EDP　Sciences,　2018.