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author:

Guan, Taotao (Guan, Taotao.) [1] | Yang, Fang (Yang, Fang.) [2] | Wang, Wei (Wang, Wei.) [3] | Liu, Peng (Liu, Peng.) [4] | Fan, Zexin (Fan, Zexin.) [5] | Cheng, Leijian (Cheng, Leijian.) [6] | Chen, Zikun (Chen, Zikun.) [7] | Yu, Runze (Yu, Runze.) [8] | Zhao, Qiancheng (Zhao, Qiancheng.) [9] | Zhang, Dacheng (Zhang, Dacheng.) [11]

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EI Scopus

Abstract:

This paper reported a novel high-roundness deep-depth great-selectivity HNA, i.e. hydrofluoric acid + nitric acid + acetic acid, etching system for silicon deep-hole corrosion for the first time. A fluid model based on finite element method (FEM) is established to research HNA deep-hole corrosion mechanism based on the analysis of etchant flowing patterns and the transport mode of reactant and resultant. HNA deep smooth circular-hole corrosion is achieved, which can be widely used for pressure sensor, gyroscope and flowmeter, etc. The system can reinforce complex high-level microelectromechanical systems (MEMS) design with an effective fabrication technic. HNA ratio is designed as 2:7:1, the Si3N4 mask selection is more than 2200, corrosion rate is close to 11 μ m. Corrosion depth reaches 337.5μm. The inhomogeneity of corrosion depth between different holes is less than 3.6%. The maximum height fluctuation in the hole is less than 0.88% of the corrosion depth. The roundness of the hole is less than 5%0. © 2018 IEEE.

Keyword:

Corrosion rate Electromechanical devices Etching Hydrofluoric acid MEMS Nanosensors Product design Silicon compounds

Community:

  • [ 1 ] [Guan, Taotao]Peking University, Institute of Microelectronics, Beijing, China
  • [ 2 ] [Yang, Fang]Peking University, Institute of Microelectronics, Beijing, China
  • [ 3 ] [Wang, Wei]Peking University, Institute of Microelectronics, Beijing, China
  • [ 4 ] [Liu, Peng]Peking University, Institute of Microelectronics, Beijing, China
  • [ 5 ] [Fan, Zexin]Peking University, Institute of Microelectronics, Beijing, China
  • [ 6 ] [Cheng, Leijian]Peking University, Institute of Microelectronics, Beijing, China
  • [ 7 ] [Chen, Zikun]Fuzhou University, Institute of Physics and Information Engineering, Fuzhou, China
  • [ 8 ] [Yu, Runze]Peking University, Institute of Microelectronics, Beijing, China
  • [ 9 ] [Zhao, Qiancheng]Peking University, Institute of Microelectronics, Beijing, China
  • [ 10 ] [Wang, Wei]Peking University, Institute of Microelectronics, Beijing, China
  • [ 11 ] [Zhang, Dacheng]Peking University, Institute of Microelectronics, Beijing, China

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Year: 2018

Page: 397-400

Language: English

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 2

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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