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author:

Cheng, Shuying (Cheng, Shuying.) [1] (Scholars:程树英) | Zhang, Hong (Zhang, Hong.) [2]

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Abstract:

SnS films with thicknesses of 65-580nm have been deposited on glass substrates by thermal evaporation. The physical properties of the films were investigated using X-ray diffraction, scanning electron microscopy, and ultraviolet-visible-near infrared spectroscopy measurements at room temperature. It indicates that the deposited films mainly exhibit SnS phase, but they contain tiny SnO2. The deposited SnS films are pinhole free, smooth and strongly adherent to the surface of the substrate. With the increase of the film thickness from 65nm to 580nm, the color of the SnS films changes from brown to dark brown to grey, and the grains of the films become larger and larger, and the direct bandgap and indirect bandgap decrease. All the films have larger direct bandgap of 1.55 - 2.30 eV, which is much larger than 1.3 eV of bulk SnS, and indirect bandgap of 1.10 - 1.29 eV. © 2011 IEEE.

Keyword:

Energy gap Infrared devices IV-VI semiconductors Layered semiconductors Near infrared spectroscopy Optical films Optical properties Scanning electron microscopy Substrates Thermal evaporation

Community:

  • [ 1 ] [Cheng, Shuying]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 2 ] [Zhang, Hong]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China

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Year: 2011

Page: 154-157

Language: English

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ESI Highly Cited Papers on the List: 0 Unfold All

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30 Days PV: 1

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