• Complex
  • Title
  • Keyword
  • Abstract
  • Scholars
  • Journal
  • ISSN
  • Conference
成果搜索

author:

Huang, Shi-Zhen (Huang, Shi-Zhen.) [1] (Scholars:黄世震) | Lin, Wei (Lin, Wei.) [2] (Scholars:林伟) | Chen, Wen-Zhe (Chen, Wen-Zhe.) [3]

Indexed by:

EI

Abstract:

By thermal decomposition, WO3nanosized material was prepared as sensitive material and doped SiO2nanosized material has been prepared using Sol-Gel process. NO2gas-sensing elements have been manufactured with prepared material. The element is sensitive to NO2with fairly good selectivity. Micro-structure of the material was analyzed by SEM, and the sensing mechanism was discussed.

Keyword:

Decomposition Nitrogen oxides Semiconductor devices Sol-gel process

Community:

  • [ 1 ] [Huang, Shi-Zhen]Department of Electronic Science Applied Physics, Fuzhou University, Fuzhou 350002, China
  • [ 2 ] [Lin, Wei]Department of Electronic Science Applied Physics, Fuzhou University, Fuzhou 350002, China
  • [ 3 ] [Chen, Wen-Zhe]Department of Electronic Science Applied Physics, Fuzhou University, Fuzhou 350002, China

Reprint 's Address:

Show more details

Related Keywords:

Source :

ISSN: 1022-6680

Year: 2008

Volume: 31

Page: 126-128

Language: English

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

Online/Total:100/10045120
Address:FZU Library(No.2 Xuyuan Road, Fuzhou, Fujian, PRC Post Code:350116) Contact Us:0591-22865326
Copyright:FZU Library Technical Support:Beijing Aegean Software Co., Ltd. 闽ICP备05005463号-1