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author:

Huang, S.-Z. (Huang, S.-Z..) [1] (Scholars:黄世震) | Lin, W. (Lin, W..) [2] (Scholars:林伟) | Wang, D.-W. (Wang, D.-W..) [3]

Indexed by:

Scopus PKU CSCD

Abstract:

The semi conductive HCl gas sensor based on WO 3 is prepared by dopping, and the characteristic of that is studied. The special structure WO 3 is produced from Na 2WO 3 and strong hydrochloric acid by sol-gel method. It's found by XRD, SEM and TEM that the structure is sheet and incompact and the mean particle is about 17 nm. The sensitivity to HCl can be improved greatly by dopping Al 2O 3 but the stability and selectivity is poor. Although the sensitivity is reduced by dopping a little ZnO, the stability can be improved greatly. The sensitivity to NO 2 can be reduced by increasing the heating voltage. The sensitivity mechanism and characteristic of WO 3 is analyzed.

Keyword:

Gas sensitivity; Gas sensor; HCl

Community:

  • [ 1 ] [Huang, S.-Z.]Fujian Key Laboratory of Microelectronics and Integrate Circuit, Fuzhou University, Fuzhou 350002, China
  • [ 2 ] [Huang, S.-Z.]Department of Physics and Information, Fuzhou University, Fuzhou 350002, China
  • [ 3 ] [Lin, W.]Fujian Key Laboratory of Microelectronics and Integrate Circuit, Fuzhou University, Fuzhou 350002, China
  • [ 4 ] [Lin, W.]Department of Physics and Information, Fuzhou University, Fuzhou 350002, China
  • [ 5 ] [Wang, D.-W.]Fujian Key Laboratory of Microelectronics and Integrate Circuit, Fuzhou University, Fuzhou 350002, China
  • [ 6 ] [Wang, D.-W.]Department of Physics and Information, Fuzhou University, Fuzhou 350002, China

Reprint 's Address:

  • 黄世震

    [Huang, S.-Z.]Fujian Key Laboratory of Microelectronics and Integrate Circuit, Fuzhou University, Fuzhou 350002, China

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Source :

Journal of Functional Materials and Devices

ISSN: 1007-4252

CN: 31-1708/TB

Year: 2008

Issue: 1

Volume: 14

Page: 167-170

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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