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author:

Ni, Ziquan (Ni, Ziquan.) [1] | Zhu, Yangbin (Zhu, Yangbin.) [2] | Ju, Songman (Ju, Songman.) [3] | Xu, Zhongwei (Xu, Zhongwei.) [4] (Scholars:徐中炜) | Tian, Fengqing (Tian, Fengqing.) [5] | Hu, Hailong (Hu, Hailong.) [6] (Scholars:胡海龙) | Guo, Tailiang (Guo, Tailiang.) [7] (Scholars:郭太良) | Li, Fushan (Li, Fushan.) [8] (Scholars:李福山)

Indexed by:

EI SCIE

Abstract:

Memristors based on organic-inorganic halide perovskite have received intensive attention because of its solution-processability and defect-tolerant characteristics. But the lead element in perovskite is inevitably harmful to human body and environment. Herein, we report an e-synapse based on lead-free organic halide perovskite (CH3NH3)(3)Sb2Cl9 (MA(3)Sb(2)Cl(9)), which exhibits excellent mimic of biological synaptic characteristics, such as excitatory postsynaptic currents (EPSCs), inhibitory postsynaptic currents (IPSCs), and paired-pulse facilitation (PPF). Furthermore, the synaptic weight of the e-synapse is found to be dependent on the frequency of pulse stimulation. The charge conduction mechanism of the e-synapse is proposed based on the in-depth investigation of the electrical characteristics of the devices. This work demonstrates that lead-free organic perovskite MA(3)Sb(2)Cl(9) provide a new perspective on engineering e-synapses for neuromorphic computing and have a great potential for environment-friendly artificial intelligence applications.

Keyword:

Artificial intelligence Biology Electrodes electronic synapse Indexes Lead lead-free perovskite memristor Memristors Neurons Synapses

Community:

  • [ 1 ] [Ni, Ziquan]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 2 ] [Zhu, Yangbin]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 3 ] [Ju, Songman]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 4 ] [Xu, Zhongwei]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 5 ] [Tian, Fengqing]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 6 ] [Hu, Hailong]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 7 ] [Guo, Tailiang]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 8 ] [Li, Fushan]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China

Reprint 's Address:

  • 李福山

    [Li, Fushan]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China

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Source :

IEEE TRANSACTIONS ON ELECTRON DEVICES

ISSN: 0018-9383

Year: 2021

Issue: 9

Volume: 68

Page: 4425-4430

3 . 2 2 1

JCR@2021

2 . 9 0 0

JCR@2023

ESI Discipline: ENGINEERING;

ESI HC Threshold:105

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 7

SCOPUS Cited Count: 8

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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