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author:

Lan, Shuoiong (Lan, Shuoiong.) [1] | Zhong, Jianfeng (Zhong, Jianfeng.) [2] | Wang, Xiaoyan (Wang, Xiaoyan.) [3]

Indexed by:

EI SCIE

Abstract:

The morphology of the active layer is vital for the device performance of organic electronics. However, most research is primarily focused on the active layer prepared from the spin coating method, which is not suitable for large area manufacturing. The inkjet printing technique has been widely studied in the field of organic electronics due to its advantages of scalability, patternability, and affordability. Nevertheless, morphological changes in the active layer during inkjet printing have received little attention. Herein, for the first time, the influence of inkjet printing parameters on the bulk heterojunction morphology and device performance of organic photovoltaics (OPVs) was systematically studied. The crystal sizes decreased as the inkjet printing speed or substrate temperature increased, which was vital for bimolecular recombination and carrier transport. Moreover, the pi-pi stacking distance decreased as the inkjet printing speed increased, which is beneficial to charge transport, resulting in improved device performance. However, an uneven film was formed when the substrate temperature increased, degrading the device performance. It is demonstrated that the control of inkjet printing parameters can effectively improve the morphology of active layer, paving guides for high-efficiency large-area production of OPVs and other organic electronics.

Keyword:

inkjet printing speed morphology control organic photovoltaics substrate temperature

Community:

  • [ 1 ] [Lan, Shuoiong]Jimei Univ, Sch Sci, Dept Phys, Xiamen 361021, Peoples R China
  • [ 2 ] [Wang, Xiaoyan]Jimei Univ, Sch Sci, Dept Phys, Xiamen 361021, Peoples R China
  • [ 3 ] [Zhong, Jianfeng]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China

Reprint 's Address:

  • [Lan, Shuoiong]Jimei Univ, Sch Sci, Dept Phys, Xiamen 361021, Peoples R China

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Source :

JOURNAL OF PHYSICS D-APPLIED PHYSICS

ISSN: 0022-3727

Year: 2021

Issue: 46

Volume: 54

3 . 4 0 9

JCR@2021

3 . 1 0 0

JCR@2023

ESI Discipline: PHYSICS;

ESI HC Threshold:87

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 6

SCOPUS Cited Count: 9

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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