Benefiting　from　solution　processability,　material　diversity　and　biocompatibility　properties　of　organic　semiconductors,　organic　synaptic　transistor　is　a　promising　alternative　to　execute　neuromorphic　computing.　Unfortunately,　conventional　planner　organic　synaptic　transistors　suffer　from　poor　analog　weight　update　and　fault　tolerance,　which　limits　the　pattern　recognition　accuracy　of　organic　neuromorphic　system.　Herein,　a　scalable　and　reconfigurable　nanoscale　channel　organic　ferroelectric　synaptic　transistor　array　(NOFST)　is　firstly　demonstrated.　Different　from　planner　synaptic　devices　whose　synaptic　properties　mostly　rely　on　manipulating　carrier　densities,　the　operation　mechanism　of　NOFST　is　associated　with　the　virtual　contact　formation　of　pseudo-conductive　channel　and　polarization　tuned　distribution　of　carriers,　which　manipulates　the　injection　of　carries　into　semiconductor.　Hence,　benefiting　from　the　nanoscale　channel　length　and　the　above　unique　operation　mechanism,　NOFST　exhibits　excellent　gate　control　ability　contributing　to　the　improvement　of　fault　tolerance　and　weight　update　properties.　Finally,　the　neuromorphic　system　built　from　NOFST　achieves　91.38%　recognition　accuracy　of　handwriting　digit,　which　is　record　high　for　organic　field-effect　synaptic　transistors.　The　special　device　structure　is　wildly　applicable　for　other　organic　semiconductor　materials,　providing　a　new　pathway　for　developing　organic　neuromorphic　hardware　systems　with　high　recognition　accuracy.