As　an　alternative　device　for　neuromorphic　computing　to　conquer　von　Neumann　bottleneck,　the　memristor　serving　as　an　artificial　synapse　has　attracted　much　attention.　The　TaO　x　memristors　embedded　with　silver　nanoparticles　(Ag　NPs)　have　been　fabricated　to　implement　synaptic　plasticity　and　to　investigate　the　effects　of　Ag　NPs.　The　TaO　x　memristors　with　and　without　Ag　NPs　are　capable　of　simulating　synaptic　plasticity　(PTP,　STDP,　and　STP　to　LTP),　learning,　and　memory　behaviors.　The　conduction　of　the　high　resistance　state　(HRS)　is　driven　by　Schottky-emission　mechanism.　The　embedment　of　Ag　NPs　causes　the　low　resistance　state　(LRS)　conduction　governed　by　a　Poole-Frenkel　emission　mechanism　instead　of　a　space-charge-limited　conduction　(SCLC)　in　a　pure　TaO　x　system,　which　is　ascribed　to　the　Ag　NPs　enhancing　electric　field　to　produce　additional　traps　and　to　reduce　Coulomb　potential　energy　of　bound　electrons　to　assist　electron　transport.　Consequently,　the　enhanced　electric　fields　induced　by　Ag　NPs　increase　the　learning　strength　and　learning　speed　of　the　synapses.　Additionally,　they　also　improve　synaptic　sensitivity　to　stimuli.　The　linearity　of　conductance　modulation　and　the　reproducibility　of　conductance　are　improved　as　well.