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Abstract：
The construction of heterostructures is a universal method to hinder the radiative recombination of hot electrons and hot holes, which can effectively enhance the photothermal effect of semiconductors. In this work, a one-pot method was employed to prepare a composite named Bi2Se3@ZIF-8 NPs, which incredibly increased the photothermal conversion efficiency of Bi2Se3 NPs. The temperature elevation of Bi2Se3@ZIF-8 NPs was almost double that of the Bi2Se3 NPs; specifically, the temperature of the irradiated Bi2Se3@ZIF-8 NPs was strikingly increased to 130 degrees C within 6 seconds, and finally stabilized at 165 degrees C. Furthermore, the photothermal conversion ability was maintained over multiple irradiation cycles, which endows this composite with great potential to be an excellent photothermal agent.
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DALTON TRANSACTIONS
ISSN： 1477-9226
Year： 2021
Issue： 47
Volume： 50
Page： 17499-17505
4 . 5 6 9
JCR@2021
3 . 5 0 0
JCR@2023
ESI Discipline： CHEMISTRY;
ESI HC Threshold：117
JCR Journal Grade：1
CAS Journal Grade：2
Cited Count：
SCOPUS Cited Count：
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 3
Affiliated Colleges：
