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author:

Ni, Ziquan (Ni, Ziquan.) [1] | Zhu, Yangbin (Zhu, Yangbin.) [2] | Ju, Songman (Ju, Songman.) [3] | Xu, Zhongwei (Xu, Zhongwei.) [4] | Tian, Fengqing (Tian, Fengqing.) [5] | Hu, Hailong (Hu, Hailong.) [6] | Guo, Tailiang (Guo, Tailiang.) [7] | Li, Fushan (Li, Fushan.) [8]

Indexed by:

EI

Abstract:

Memristors based on organic-inorganic halide perovskite have received intensive attention because of its solution-processability and defect-tolerant characteristics. But the lead element in perovskite is inevitably harmful to human body and environment. Herein, we report an e-synapse based on lead-free organic halide perovskite (CH3NH3)3Sb2Cl9 (MA3Sb2Cl9), which exhibits excellent mimic of biological synaptic characteristics, such as excitatory postsynaptic currents (EPSCs), inhibitory postsynaptic currents (IPSCs), and paired-pulse facilitation (PPF). Furthermore, the synaptic weight of the e-synapse is found to be dependent on the frequency of pulse stimulation. The charge conduction mechanism of the e-synapse is proposed based on the in-depth investigation of the electrical characteristics of the devices. This work demonstrates that lead-free organic perovskite MA3Sb2Cl9 provide a new perspective on engineering e-synapses for neuromorphic computing and have a great potential for environment-friendly artificial intelligence applications. © 1963-2012 IEEE.

Keyword:

Artificial intelligence Lead compounds Perovskite

Community:

  • [ 1 ] [Ni, Ziquan]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 2 ] [Zhu, Yangbin]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 3 ] [Ju, Songman]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 4 ] [Xu, Zhongwei]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 5 ] [Tian, Fengqing]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 6 ] [Hu, Hailong]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 7 ] [Guo, Tailiang]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 8 ] [Li, Fushan]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China

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Source :

IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year: 2021

Issue: 9

Volume: 68

Page: 4425-4430

3 . 2 2 1

JCR@2021

2 . 9 0 0

JCR@2023

ESI HC Threshold:105

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 8

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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