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author:

Wang, Xiumei (Wang, Xiumei.) [1] | Li, Enlong (Li, Enlong.) [2] | Liu, Yaqian (Liu, Yaqian.) [3] | Lan, Shuqiong (Lan, Shuqiong.) [4] | Yang, Huihuang (Yang, Huihuang.) [5] | Yan, Yujie (Yan, Yujie.) [6] | Shan, Liuting (Shan, Liuting.) [7] | Lin, Zhixian (Lin, Zhixian.) [8] | Chen, Huipeng (Chen, Huipeng.) [9] | Guo, Tailiang (Guo, Tailiang.) [10]

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EI

Abstract:

Stretchable organic transistors possess great potential in a variety of emerging areas such as biomedical electronics, wearable gadgets and smart skin. Here, stretchable vertical organic field effect transistor (s-VOFET) is developed for the first time, which exhibits low working voltage (−0.5 V), high current density (5.19 mA/cm2) and excellent stretching stability. More interesting, the on state current increased by 68.5% and the sub-threshold swing decreased by 25.2% with the increase of the strain to 20%. It is ascribed to the enhanced face-on orientation of π-π stacking in semiconductor film by stretching strain, providing more efficient pathways for vertical charge transport. Meanwhile, simulation results demonstrate that stretching strain can enhance gate field controllability to charge carriers, resulting in enhanced charge transport and accumulation. Moreover, stretchable vertical synaptic transistor (s-VST) is fabricated by replacing cross-linked PVA with ion gel, which exhibits stable synaptic characteristics even with 60% stretching strain. Noticeably, coupling triboelectric nanogenerator (TENG) and synaptic transistor leads to a new field of triboelectric, which enables the direct interactions between environmental perception data and human-machine interfacing. Therefore, a stretchable self-powered neurologically integrated artificial tactile pathway is constructed using TENG and s-VST, which successfully conducts touch wireless communication and sensory skin touch-interaction. This work provides critical guidelines for the development of high performance stretchable electronic devices and a new platform for enabling neurological functions in stretchable electronics. © 2021

Keyword:

Flexible electronics Mechanical stability Nanogenerators Organic field effect transistors Triboelectricity

Community:

  • [ 1 ] [Wang, Xiumei]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 2 ] [Wang, Xiumei]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 3 ] [Li, Enlong]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 4 ] [Li, Enlong]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 5 ] [Liu, Yaqian]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 6 ] [Lan, Shuqiong]Department of Physics, School of Science, Jimei University, Xiamen; 361021, China
  • [ 7 ] [Yang, Huihuang]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 8 ] [Yan, Yujie]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 9 ] [Shan, Liuting]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 10 ] [Lin, Zhixian]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 11 ] [Lin, Zhixian]School of Advanced Manufacturing, Fuzhou University, Quanzhou; 362200, China
  • [ 12 ] [Chen, Huipeng]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 13 ] [Chen, Huipeng]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 14 ] [Guo, Tailiang]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 15 ] [Guo, Tailiang]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China

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Source :

Nano Energy

ISSN: 2211-2855

Year: 2021

Volume: 90

1 9 . 0 6 9

JCR@2021

1 6 . 8 0 0

JCR@2023

ESI HC Threshold:142

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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