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author:

Wang, Kun (Wang, Kun.) [1] | Liu, Ye (Liu, Ye.) [2] | Chen, Rong (Chen, Rong.) [3] | Wu, Chaoxing (Wu, Chaoxing.) [4] | Zhou, Xiongtu (Zhou, Xiongtu.) [5] | Zhang, Yongai (Zhang, Yongai.) [6] | Liu, Zhiqiang (Liu, Zhiqiang.) [7] | Guo, Tailiang (Guo, Tailiang.) [8]

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EI

Abstract:

Noncarrier injection (NCI) mode is an emerging driving mode for nanoscale light-emitting diodes (LEDs). Here, we demonstrate that a single light pulse from NCI-LEDs can be split into multiple pulses with small pulse widths that cannot be obtained by using traditional driving technology. Light-pulse splitting is achieved by using a combined signal that is a superposition of a basic signal and a signal with small amplitude and high frequency. Theoretical equations regarding the conduction current and current-pulse splitting are provided to explain light-pulse splitting theoretically. Then, light-pulse splitting is experimentally proven with a capacitor-LED-capacitor construction that is used to simulate the luminescence in NCI mode physically. Finally, we demonstrate light-pulse splitting from nanorod GaN-LEDs and discuss the working mechanisms related to electron multiple-frequency oscillation. This work can deepen the understanding of the NCI mode and provides a potential approach for advanced light-pulse-based technology. © 1980-2012 IEEE.

Keyword:

Gallium nitride III-V semiconductors Light Light emitting diodes Light transmission Nanorods

Community:

  • [ 1 ] [Wang, Kun]College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
  • [ 2 ] [Liu, Ye]College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
  • [ 3 ] [Chen, Rong]Fujian Science Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, China
  • [ 4 ] [Wu, Chaoxing]College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
  • [ 5 ] [Zhou, Xiongtu]College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
  • [ 6 ] [Zhang, Yongai]College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
  • [ 7 ] [Liu, Zhiqiang]Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
  • [ 8 ] [Guo, Tailiang]College of Physics and Information Engineering, Fuzhou University, Fuzhou, China

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Source :

IEEE Electron Device Letters

ISSN: 0741-3106

Year: 2021

Issue: 7

Volume: 42

Page: 1033-1036

4 . 8 1 6

JCR@2021

4 . 1 0 0

JCR@2023

ESI HC Threshold:105

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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