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author:

Chen, Shenzhong (Chen, Shenzhong.) [1] | Yu, Jinling (Yu, Jinling.) [2] | Zhu, Kejing (Zhu, Kejing.) [3] | Zeng, Xiaolin (Zeng, Xiaolin.) [4] | Chen, Yonghai (Chen, Yonghai.) [5] | Liu, Yu (Liu, Yu.) [6] | Zhang, Yang (Zhang, Yang.) [7] | Cheng, Shuying (Cheng, Shuying.) [8] | He, Ke (He, Ke.) [9]

Indexed by:

EI

Abstract:

A hallmark signature of the three-dimensional (3D) topological insulator (TI) is that the spin-momentum locked massless Dirac fermions populate its surface states, where the carrier spins are locked to their momentum. Here, we report on the magnetic-field induced helicity dependent photogalvanic effect (MHPGE) of 3D TI thin films Bi 2Te 3 or (Bi xSb 1 - x) 2Te 3 of different thicknesses excited by near-infrared (1064 nm) under an in-plane magnetic field. It is found that the MHPGE current J c x under the longitudinal geometry, i.e., J c x ≥ B x, is induced by the Larmor procession, while that under the transverse geometry, i.e., J c x ≥ B y, is mainly introduced by the hexagonal warping, which can be enhanced by the in-plane magnetic field. Our work demonstrates the possibility to tune the spin-polarized photocurrent of the surface states in 3D TIs via a magnetic field, which may be utilized to design new kinds of opto-spintronic devices. © 2021 Author(s).

Keyword:

Electric insulators Infrared devices Magnetic fields Photocurrents Surface states Topological insulators

Community:

  • [ 1 ] [Chen, Shenzhong]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 2 ] [Yu, Jinling]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 3 ] [Zhu, Kejing]Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing; 100084, China
  • [ 4 ] [Zeng, Xiaolin]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
  • [ 5 ] [Zeng, Xiaolin]College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing; 100049, China
  • [ 6 ] [Chen, Yonghai]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
  • [ 7 ] [Chen, Yonghai]College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing; 100049, China
  • [ 8 ] [Liu, Yu]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
  • [ 9 ] [Liu, Yu]College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing; 100049, China
  • [ 10 ] [Zhang, Yang]School of Materials Science and Physics, China University of Mining and Technology, Xuzhou, Jiangsu; 221116, China
  • [ 11 ] [Cheng, Shuying]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 12 ] [Cheng, Shuying]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou, Jiangsu; 213164, China
  • [ 13 ] [He, Ke]Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing; 100084, China

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Source :

Journal of Applied Physics

ISSN: 0021-8979

Year: 2021

Issue: 8

Volume: 130

2 . 8 7 7

JCR@2021

2 . 7 0 0

JCR@2023

ESI HC Threshold:87

JCR Journal Grade:2

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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