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author:

Chen, Shenzhong (Chen, Shenzhong.) [1] | Yu, Jinling (Yu, Jinling.) [2] (Scholars:俞金玲) | Zhu, Kejing (Zhu, Kejing.) [3] | Liu, Qibin (Liu, Qibin.) [4] | Zeng, Xiaolin (Zeng, Xiaolin.) [5] | Chen, Yonghai (Chen, Yonghai.) [6] | Yin, Chunming (Yin, Chunming.) [7] | Cheng, Shuying (Cheng, Shuying.) [8] (Scholars:程树英) | Lai, Yunfeng (Lai, Yunfeng.) [9] (Scholars:赖云锋) | He, Ke (He, Ke.) [10]

Indexed by:

EI Scopus SCIE

Abstract:

Inverse spin Hall effect (ISHE) provides an important way to manipulate and detect spin current via spin-orbit coupling. However, it is difficult to distinguish the ISHE of the top and bottom surface states of topological insulators (TIs). Photo-induced inverse spin Hall effect (PISHE) is a powerful tool to investigate the ISHE of the Dirac surface states of TIs. In this work, PISHE of three-dimensional topological insulators Sb2Te3 with a thickness of 7 and 30 quintuple layer (QL) has been investigated. It is revealed that both of the PISHE currents of the top and bottom surface states are observed in the 7-QL and the 30-QL samples. Besides, a model has been developed to separate the PISHE current of the top and bottom surface states. It is found that the PISHE currents of the top and bottom surface states of the Sb2Te3 films almost do not change with temperature in the range of 77 to 300 K. It is demonstrated that the PISHE current changes linearly with light power, which agrees well with the theoretical model. This study provides a method utilizing circularly polarized light to manipulate and detect the ISHE of the top and bottom surface states of three-dimensional topological insulators.

Keyword:

Photo-induced inverse spin Hall effect Sb2Te3 Top and bottom surface states Topological insulators

Community:

  • [ 1 ] [Chen, Shenzhong]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 2 ] [Yu, Jinling]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 3 ] [Liu, Qibin]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 4 ] [Cheng, Shuying]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 5 ] [Lai, Yunfeng]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 6 ] [Zhu, Kejing]Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
  • [ 7 ] [He, Ke]Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
  • [ 8 ] [Zeng, Xiaolin]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 9 ] [Chen, Yonghai]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 10 ] [Chen, Yonghai]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 11 ] [Yin, Chunming]Univ New South Wales, Sch Phys, Sydney, NSW 2052, Australia
  • [ 12 ] [Yin, Chunming]Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum Ph, Dept Modern Phys, CAS Key Lab Microscale Magnet Resonance, Hefei 230026, Peoples R China
  • [ 13 ] [Cheng, Shuying]Changzhou Univ, Jiangsu Collaborat Innovat Ctr Photovolta Sci & En, Changzhou 213164, Jiangsu, Peoples R China

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Source :

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

ISSN: 1386-9477

Year: 2022

Volume: 143

3 . 3

JCR@2022

2 . 9 0 0

JCR@2023

ESI Discipline: PHYSICS;

ESI HC Threshold:55

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 1

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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