The　searching　for　new　memory　that　can　work　under　harsh　conditions　will　be　significant　for　their　application　in　some　important　fields　such　as　geothermal,　oil　and　aerospace　industries.　In　this　work,　memory　devices　with　simple　sandwich　structures　using　the　g-C3N4　treated　by　different　concentration　acids　as　active　layers　have　been　fabricated,　which　exhibit　non-volatile　behaviors　and　bipolar　switching　characteristics.　Protonation　treatment　can　enhance　the　memory　performance　efficiently　compared　with　un-protonized　device.　Among　them,　the　device　containing　g-C3N4　treated　with　8　M　HCl　presents　the　best　resistive　switching　performance　with　ON/OFF　ratio　of　104　and　good　retention　capability,　which　might　be　relative　to　its　texture　without　violent　tortuosity.　In　addition,　the　protonated　g-C3N4-based　memory　devices　exhibit　good　environmental　robustness,　including　temperature　and　ionizing　irradiation.　Specially,　its　high　tolerant　temperature　(454　°C)　can　also　be　assisted　by　doping　BN　for　heat　dissipation.　Their　good　thermal/irradiating　stabilities　are　assigned　to　the　strong　bond　energy　of　C[dbnd]N　double　bonds　localized　π-conjugated　tri-s-triazine　rings.　In　all,　the　facial　protonation　treatment　without　any　functionalization　or　supporting,　the　simple　sandwich　device　structure　and　good　environmental　robustness　endow　their　promising　applications　in　aerospace　and　outdoor　environment.　©　2022　Elsevier　B.V.