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author:

Chen, Gengxu (Chen, Gengxu.) [1] | Yu, Weijie (Yu, Weijie.) [2] | Hao, Yanxue (Hao, Yanxue.) [3] | Peng, Gang (Peng, Gang.) [4] | Yu, Xipeng (Yu, Xipeng.) [5] | Dai, Yan (Dai, Yan.) [6] | Chen, Huipeng (Chen, Huipeng.) [7] | Guo, Tailiang (Guo, Tailiang.) [8]

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EI

Abstract:

Arrays of flexible organic thin-film transistors (OTFTs) are the prerequisite to realize commercialization of flexible electronics. However, photolithography and print techniques are uneasy to combine high performance, high integration density, and compatibility with flexible substrates to fabricate OTFT arrays. In this work, OTFT arrays with high resolution, flexibility and process convenience are patterned by femtosecond laser (fs-laser). 1 cm2 of area can accommodate up to 6250 transistors with sharp edges and short channel lengths by selective processing. Furthermore, micron-scale resolution flexible image sensor with integration potential were verified. Hence, these results will impel the development of flexible wearable electronic devices in the future. 0741-3106 © 2021 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission. See https://www.ieee.org/publications/rights/index.html for more information.

Keyword:

Femtosecond lasers Flexible electronics Image processing Image sensors Laser ablation Organic lasers Substrates Thin film circuits Thin films Thin film transistors

Community:

  • [ 1 ] [Chen, Gengxu]Institute of Optoelectronic Display, Fuzhou University, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou; 350108, China
  • [ 2 ] [Chen, Gengxu]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 3 ] [Yu, Weijie]Institute of Optoelectronic Display, Fuzhou University, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou; 350108, China
  • [ 4 ] [Yu, Weijie]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 5 ] [Hao, Yanxue]Institute of Optoelectronic Display, Fuzhou University, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou; 350108, China
  • [ 6 ] [Hao, Yanxue]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 7 ] [Peng, Gang]Institute of Optoelectronic Display, Fuzhou University, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou; 350108, China
  • [ 8 ] [Peng, Gang]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 9 ] [Yu, Xipeng]Institute of Optoelectronic Display, Fuzhou University, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou; 350108, China
  • [ 10 ] [Yu, Xipeng]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 11 ] [Dai, Yan]Institute of Optoelectronic Display, Fuzhou University, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou; 350108, China
  • [ 12 ] [Dai, Yan]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 13 ] [Chen, Huipeng]Institute of Optoelectronic Display, Fuzhou University, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou; 350108, China
  • [ 14 ] [Chen, Huipeng]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 15 ] [Guo, Tailiang]Institute of Optoelectronic Display, Fuzhou University, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou; 350108, China
  • [ 16 ] [Guo, Tailiang]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China

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Source :

IEEE Electron Device Letters

ISSN: 0741-3106

Year: 2022

Issue: 2

Volume: 43

Page: 248-251

4 . 9

JCR@2022

4 . 1 0 0

JCR@2023

ESI HC Threshold:66

JCR Journal Grade:2

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 4

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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