In　order　to　comply　with　the　rapid　development　of　new-generation　electronics,　developing　memories　which　could　meet　the　demands　for　specific　application　such　as　flexibility,　transparency　and　neuromorphic　functions　are　of　great　significance.　In　this　work,　a　transparent　organic　nonvolatile　memory　(transparency≥81%)　is　developed　with　Ag　nanowire　as　floating　gate　layer,　which　exhibits　excellent　memory　characteristics　and　mechanical　flexibility.　Moreover,　the　transition　from　memory　to　artificial　synapse　is　achieved　by　adjusting　the　concentration　of　Ag　nanowire.　This　work　provides　a　new　solution　for　transparent　flexible　memory　and　shows　their　potential　for　next-generation　transparent　organic　electronics.　©　1980-2012　IEEE.