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author:

Weng, Yalian (Weng, Yalian.) [1] | Chen, Guixiong (Chen, Guixiong.) [2] | Zhou, Xiongtu (Zhou, Xiongtu.) [3] | Zhang, Yongai (Zhang, Yongai.) [4] | Yan, Qun (Yan, Qun.) [5] | Guo, Tailiang (Guo, Tailiang.) [6]

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EI

Abstract:

Improving the quantum yield of non-toxic InP/ZnS QDs is essential for its commercial application in illumination and displays. In this work, single size Au nanoparticles (Au NPs) coated with different shell thicknesses of Al2O3 as well as TiO2 fabricated by atomic layer deposition were prepared and applied to enhance the photoluminescence of InP/ZnS QDs with different emission wavelengths. These oxide films were used to control the distance between Au NPs and QDs to inhibit the fluorescence resonance energy transfer (FRET) and to demonstrate the competitive mechanism of fluorescence enhancement and fluorescence quenching induced by local surface plasmon resonance. It was found that the size dependence of Au NPs and the FRET effect can be effectively alleviated by covering different oxide shells. When the Au NPs coated with 10 nm Al2O3 and 6 nm TiO2, the photoluminescence of InP/ZnS green QDs and red QDs can be increased by 3.46 times and 5.65 times, respectively. These results indicate that the fluorescence intensity of quantum dots with different emission wavelengths can be easily improved by coating Au NPs with different types of shells or with different thicknesses, exhibiting the promising application prospect in backlight and biometric recognition of QDs. © 2022, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.

Keyword:

Alumina Aluminum oxide Atomic layer deposition Energy transfer Forster resonance energy transfer Gold nanoparticles III-V semiconductors Indium phosphide Nanocrystals Oxide films Photoluminescence Semiconducting indium phosphide Semiconductor quantum dots Surface plasmon resonance Titanium dioxide

Community:

  • [ 1 ] [Weng, Yalian]Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen; 361021, China
  • [ 2 ] [Chen, Guixiong]School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 3 ] [Zhou, Xiongtu]School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 4 ] [Zhou, Xiongtu]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 5 ] [Zhang, Yongai]School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 6 ] [Zhang, Yongai]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 7 ] [Yan, Qun]School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 8 ] [Yan, Qun]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 9 ] [Guo, Tailiang]School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 10 ] [Guo, Tailiang]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China

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Source :

Journal of Materials Science

ISSN: 0022-2461

Year: 2022

Issue: 15

Volume: 57

Page: 7642-7652

4 . 5

JCR@2022

3 . 5 0 0

JCR@2023

ESI HC Threshold:91

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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