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Abstract:
Interfacial engineering in oxide heterostructures has evolved into a thriving research field due to the presence of diverse novel physical phenomena. In this study, we grew epitaxial CuO thin films on a ZnO(0001) single crystal substrate, where the orientation relationship was CuO [110] (111) || ZnO [1120] (0001). The atomic, magnetic, and electronic structures of the CuO/ZnO interface and the CuO(001) twin boundary were studied by combining aberration-corrected scanning transmission electron microscopy and first-principles calculations. The CuO/ZnO interface was found to be fully coherent and metallic, making it possible to form two-dimensional electron gas between the two semiconductors.
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MATERIALS TODAY COMMUNICATIONS
ISSN: 2352-4928
Year: 2022
Volume: 33
3 . 8
JCR@2022
3 . 7 0 0
JCR@2023
ESI Discipline: MATERIALS SCIENCE;
ESI HC Threshold:91
JCR Journal Grade:2
CAS Journal Grade:4
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SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 2
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