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author:

Yu, Meng-Xuan (Yu, Meng-Xuan.) [1] | Yang, Miao (Yang, Miao.) [2] | Guo, Jin-Zhi (Guo, Jin-Zhi.) [3] | Liang, Hao-Jie (Liang, Hao-Jie.) [4] | Xie, Dan (Xie, Dan.) [5] | Gu, Zhen-Yi (Gu, Zhen-Yi.) [6] | Guo, Weiping (Guo, Weiping.) [7] | Luo, Zhong-Zhen (Luo, Zhong-Zhen.) [8] (Scholars:罗中箴) | Wu, Xing-Long (Wu, Xing-Long.) [9]

Indexed by:

EI Scopus SCIE

Abstract:

Although sodium-based conversion materials are promising as anodes for sodium-ion batteries, with evident superiority in terms of storage capacity, continuous performance deterioration occurs due to the structural degradation during cycling. Herein, by substituting the SbPS4 matrix with different amounts of Se, the targeted compounds with multiple stoichiometries, including SbPS3Se, SbPS2Se2, and SbPSSe3 are prepared. Introducing the guest element of Se into the parent thiophosphate can effectively retain the advantage of the thiophosphate, and replacing S with Se is beneficial to the modulation of electronic structure, the expansion of lattice spacing, and the enhancement of electrochemical performance. As a result, the optimized SbPS3Se material exhibits the highest reversible capacity (740.12 mA h g(-1) at a current density of 0.1 A g(-1)) and excellent cycling performance (over 69% capacity retention after 100 cycles). However, with a further increase in Se substitution content, the stability of the structure decreases because the diameter of thiophosphate nanotube materials increases continuously, leading to inferior electrochemical properties. Therefore, moderate Se substitution is beneficial to the improvement of the electrochemical performance of SbPS4 materials. The Se substitution strategy can provide an important reference value for the design and optimization of conversion anode materials.

Keyword:

anode material SbPS3Se Se substitution Sodium-ion batteries thiophosphate

Community:

  • [ 1 ] [Yu, Meng-Xuan]Northeast Normal Univ, Fac Chem, Changchun 130024, Jilin, Peoples R China
  • [ 2 ] [Liang, Hao-Jie]Northeast Normal Univ, Fac Chem, Changchun 130024, Jilin, Peoples R China
  • [ 3 ] [Xie, Dan]Northeast Normal Univ, Fac Chem, Changchun 130024, Jilin, Peoples R China
  • [ 4 ] [Wu, Xing-Long]Northeast Normal Univ, Fac Chem, Changchun 130024, Jilin, Peoples R China
  • [ 5 ] [Yang, Miao]Northeast Normal Univ, MOE Key Lab UV Light Emitting Mat & Technol, Changchun 130024, Jilin, Peoples R China
  • [ 6 ] [Guo, Jin-Zhi]Northeast Normal Univ, MOE Key Lab UV Light Emitting Mat & Technol, Changchun 130024, Jilin, Peoples R China
  • [ 7 ] [Gu, Zhen-Yi]Northeast Normal Univ, MOE Key Lab UV Light Emitting Mat & Technol, Changchun 130024, Jilin, Peoples R China
  • [ 8 ] [Wu, Xing-Long]Northeast Normal Univ, MOE Key Lab UV Light Emitting Mat & Technol, Changchun 130024, Jilin, Peoples R China
  • [ 9 ] [Guo, Weiping]Fuzhou Univ, Coll Mat Sci & Engn, Key Lab Ecomat Adv Technol, Fuzhou 350108, Peoples R China
  • [ 10 ] [Luo, Zhong-Zhen]Fuzhou Univ, Coll Mat Sci & Engn, Key Lab Ecomat Adv Technol, Fuzhou 350108, Peoples R China

Reprint 's Address:

  • [Wu, Xing-Long]Northeast Normal Univ, Fac Chem, Changchun 130024, Jilin, Peoples R China;;[Guo, Jin-Zhi]Northeast Normal Univ, MOE Key Lab UV Light Emitting Mat & Technol, Changchun 130024, Jilin, Peoples R China;;[Wu, Xing-Long]Northeast Normal Univ, MOE Key Lab UV Light Emitting Mat & Technol, Changchun 130024, Jilin, Peoples R China;;[Luo, Zhong-Zhen]Fuzhou Univ, Coll Mat Sci & Engn, Key Lab Ecomat Adv Technol, Fuzhou 350108, Peoples R China;;

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Source :

JOURNAL OF ELECTRONIC MATERIALS

ISSN: 0361-5235

Year: 2022

Issue: 2

Volume: 52

Page: 829-835

2 . 1

JCR@2022

2 . 2 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:91

JCR Journal Grade:3

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 2

SCOPUS Cited Count: 2

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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