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author:

Zhou, Yumei (Zhou, Yumei.) [1] | Li, Wangyang (Li, Wangyang.) [2] | Xie, Yonghui (Xie, Yonghui.) [3] | Deng, Liying (Deng, Liying.) [4] | Ke, Bingyuan (Ke, Bingyuan.) [5] | Jian, Yijia (Jian, Yijia.) [6] | Cheng, Shuying (Cheng, Shuying.) [7] (Scholars:程树英) | Qu, Baihua (Qu, Baihua.) [8] | Wang, Xinghui (Wang, Xinghui.) [9] (Scholars:王星辉)

Indexed by:

SCIE

Abstract:

With the advantages of low cost, high safety, and environmental friendliness, quasi-solid-state zinc-ion microbatteries (ZIMBs) have received widespread attention in the field of flexible wearable devices and on-chip integratable energy storage. However, hysteresis Zn-ion transport kinetics and inhomogeneous growth of the zinc anode result in the poor capacity reversibility and cycling stability. Herein, a quasi-solid-state planar zinc-ion cell was developed by employing a vertical graphene (VG) film as an effective conductive modification layer for both the cathode and anode. The VG distinctly induces uniform Zn deposition/stripping, accelerates the charge transport, and enhances the adhesion between the active materials and current collectors. As a result, planar Zn@VG//MnO2@VG exhibits a high areal capacity of 159 mu Ah cm-2, a remarkably high areal energy/power density of 201.5 mu Wh cm-2/67.16 mu W cm-2, and a high capacity retention of 95.6% at a bending angle of 180 degrees. The proposed facile strategy for electrode modification provides a new insight into the design of high-performance flexible and planar ZIMBs.

Keyword:

electrodeposition flexible microbattery vertical graphene zinc-ion battery

Community:

  • [ 1 ] [Zhou, Yumei]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 2 ] [Li, Wangyang]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 3 ] [Xie, Yonghui]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 4 ] [Deng, Liying]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 5 ] [Ke, Bingyuan]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 6 ] [Jian, Yijia]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 7 ] [Cheng, Shuying]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 8 ] [Wang, Xinghui]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 9 ] [Zhou, Yumei]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Fujian, Peoples R China
  • [ 10 ] [Li, Wangyang]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Fujian, Peoples R China
  • [ 11 ] [Cheng, Shuying]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Fujian, Peoples R China
  • [ 12 ] [Wang, Xinghui]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Fujian, Peoples R China
  • [ 13 ] [Cheng, Shuying]Jiangsu Collaborat Innovat Ctr Photovolta Sci & En, Changzhou 213000, Peoples R China
  • [ 14 ] [Wang, Xinghui]Jiangsu Collaborat Innovat Ctr Photovolta Sci & En, Changzhou 213000, Peoples R China
  • [ 15 ] [Qu, Baihua]Chongqing Univ, Coll Mat Sci & Engn, Chongqing 400044, Peoples R China

Reprint 's Address:

  • [Wang, Xinghui]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China;;[Wang, Xinghui]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Fujian, Peoples R China;;[Wang, Xinghui]Jiangsu Collaborat Innovat Ctr Photovolta Sci & En, Changzhou 213000, Peoples R China;;

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Source :

ACS APPLIED MATERIALS & INTERFACES

ISSN: 1944-8244

Year: 2023

8 . 5

JCR@2023

8 . 5 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:49

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 12

SCOPUS Cited Count: 14

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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