The　carrier　concentration　in　n-type　layered　Bi2Te3-based　thermoelectric　(TE)　material　is　significantly　impacted　by　the　donor-like　effect,　which　would　be　further　intensified　by　the　nonbasal　slip　during　grain　refinement　of　crushing,　milling,　and　deformation,　inducing　a　big　challenge　to　improve　its　TE　performance　and　mechanical　property　simultaneously.　In　this　work,　high-energy　refinement　and　hot-pressing　are　used　to　stabilize　the　carrier　concentration　due　to　the　facilitated　recovery　of　cation　and　anion　vacancies.　Based　on　this,　combined　with　SbI3　doping　and　hot　deformation,　the　optimized　carrier　concentration　and　high　texture　degree　are　simultaneously　realized.　As　a　result,　a　peak　figure　of　merit　(zT)　of　1.14　at　323　K　for　Bi2Te2.7Se0.3　+　0.05　wt.%　SbI3　sample　with　the　high　bending　strength　of　100　Mpa　is　obtained.　Furthermore,　a　31-couple　thermoelectric　cooling　device　consisted　of　n-type　Bi2Te2.7Se0.3　+　0.05　wt.%　SbI3　and　commercial　p-type　Bi0.5Sb1.5Te3　legs　is　fabricated,　which　generates　the　large　maximum　temperature　difference　(Delta　T-max)　of　85　K　at　a　hot-side　temperature　of　343　K.　Thus,　the　discovery　of　recovery　effect　in　high　energy　refinement　and　hot-pressing　has　significant　implications　for　improving　TE　performance　and　mechanical　strength　of　n-type　Bi2Te3,　thereby　promoting　its　applications　in　harsh　conditions.