• Complex
  • Title
  • Keyword
  • Abstract
  • Scholars
  • Journal
  • ISSN
  • Conference
成果搜索

author:

Zhou, Yuchao (Zhou, Yuchao.) [1] | Yu, Jinling (Yu, Jinling.) [2] (Scholars:俞金玲) | Chen, Yonghai (Chen, Yonghai.) [3] | Lai, Yunfeng (Lai, Yunfeng.) [4] (Scholars:赖云锋) | Cheng, Shuying (Cheng, Shuying.) [5] (Scholars:程树英)

Indexed by:

EI Scopus SCIE CSCD

Abstract:

The helicity-dependent photoconductance of the edge states in three-dimensional topological insulator Bi2Te3 films is investigated. It is revealed that the helicity-dependent photoconductivity current on the left edge of the Bi2Te3 film shows an opposite sign with that on the right edge. In addition, the helicity-dependent photoconductivity current increases linearly with the applied longitudinal electric field, and it reverses the sign with the reversal of the electric field. As the thickness of the Bi2Te3 film increases, the helicity-dependent photoconductivity current also increases. Theoretical analysis suggests that the helicity-dependent photo-conductivity current may come from the intrinsic spin orbit coupling (SOC) or the SOC introduced by the chiral impurities or defects.

Keyword:

Bi2Te3 edge states helicity-dependent photoconductance spin orbit coupling

Community:

  • [ 1 ] [Zhou, Yuchao]Fuzhou Univ, Sch Phys & Informat Engn, Inst Micro Nano Devices & Solar Cells, Fuzhou 350108, Peoples R China
  • [ 2 ] [Yu, Jinling]Fuzhou Univ, Sch Phys & Informat Engn, Inst Micro Nano Devices & Solar Cells, Fuzhou 350108, Peoples R China
  • [ 3 ] [Lai, Yunfeng]Fuzhou Univ, Sch Phys & Informat Engn, Inst Micro Nano Devices & Solar Cells, Fuzhou 350108, Peoples R China
  • [ 4 ] [Cheng, Shuying]Fuzhou Univ, Sch Phys & Informat Engn, Inst Micro Nano Devices & Solar Cells, Fuzhou 350108, Peoples R China
  • [ 5 ] [Chen, Yonghai]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 6 ] [Chen, Yonghai]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 7 ] [Cheng, Shuying]Changzhou Univ, Jiangsu Collaborat Innovat Ctr Photovolat Sci & En, Changzhou 213164, Peoples R China

Reprint 's Address:

Show more details

Related Keywords:

Source :

CHINESE PHYSICS B

ISSN: 1674-1056

CN: 11-5639/O4

Year: 2023

Issue: 8

Volume: 32

1 . 5

JCR@2023

1 . 5 0 0

JCR@2023

ESI Discipline: PHYSICS;

ESI HC Threshold:30

JCR Journal Grade:2

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

Online/Total:282/10908849
Address:FZU Library(No.2 Xuyuan Road, Fuzhou, Fujian, PRC Post Code:350116) Contact Us:0591-22865326
Copyright:FZU Library Technical Support:Beijing Aegean Software Co., Ltd. 闽ICP备05005463号-1