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author:

Zhang, Qing (Zhang, Qing.) [1] | Li, Enlong (Li, Enlong.) [2] | Wang, Yongshuai (Wang, Yongshuai.) [3] | Gao, Changsong (Gao, Changsong.) [4] | Wang, Congyong (Wang, Congyong.) [5] | Li, Lin (Li, Lin.) [6] | Geng, Dechao (Geng, Dechao.) [7] | Chen, Huipeng (Chen, Huipeng.) [8] (Scholars:陈惠鹏) | Chen, Wei (Chen, Wei.) [9] | Hu, Wenping (Hu, Wenping.) [10]

Indexed by:

EI Scopus SCIE

Abstract:

Organic field-effect transistors with parallel transmission and learning functions are of interest in the development of brain-inspired neuromorphic computing. However, the poor performance and high power consumption are the two main issues limiting their practical applications. Herein, an ultralow-power vertical transistor is demonstrated based on transition-metal carbides/nitrides (MXene) and organic single crystal. The transistor exhibits a high J(ON) of 16.6 mA cm(-2) and a high J(ON)/J(OFF) ratio of 9.12 x 10(5) under an ultralow working voltage of -1 mV. Furthermore, it can successfully simulate the functions of biological synapse under electrical modulation along with consuming only 8.7 aJ of power per spike. It also permits multilevel information decoding modes with a significant gap between the readable time of professionals and nonprofessionals, producing a high signal-to-noise ratio up to 114.15 dB. This work encourages the use of vertical transistors and organic single crystal in decoding information and advances the development of low-power neuromorphic systems.

Keyword:

artificial synapses microspacing in-air sublimation organic vertical transistors ultralow power consumption

Community:

  • [ 1 ] [Zhang, Qing]Int Campus Tianjin Univ, Joint Sch Natl Univ Singapore & Tianjin Univ, Fuzhou 350207, Peoples R China
  • [ 2 ] [Wang, Congyong]Int Campus Tianjin Univ, Joint Sch Natl Univ Singapore & Tianjin Univ, Fuzhou 350207, Peoples R China
  • [ 3 ] [Chen, Wei]Int Campus Tianjin Univ, Joint Sch Natl Univ Singapore & Tianjin Univ, Fuzhou 350207, Peoples R China
  • [ 4 ] [Hu, Wenping]Int Campus Tianjin Univ, Joint Sch Natl Univ Singapore & Tianjin Univ, Fuzhou 350207, Peoples R China
  • [ 5 ] [Zhang, Qing]Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
  • [ 6 ] [Wang, Congyong]Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
  • [ 7 ] [Chen, Wei]Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
  • [ 8 ] [Li, Enlong]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350108, Peoples R China
  • [ 9 ] [Gao, Changsong]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350108, Peoples R China
  • [ 10 ] [Chen, Huipeng]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350108, Peoples R China
  • [ 11 ] [Li, Enlong]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 12 ] [Gao, Changsong]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 13 ] [Chen, Huipeng]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 14 ] [Wang, Yongshuai]Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Beijing 100190, Peoples R China
  • [ 15 ] [Li, Lin]Tianjin Univ, Inst Mol Plus, Tianjin 300072, Peoples R China
  • [ 16 ] [Geng, Dechao]Tianjin Univ, Sch Sci, Dept Chem, Tianjin Key Lab Mol Optoelect Sci, Tianjin 300072, Peoples R China
  • [ 17 ] [Hu, Wenping]Tianjin Univ, Sch Sci, Dept Chem, Tianjin Key Lab Mol Optoelect Sci, Tianjin 300072, Peoples R China

Reprint 's Address:

  • [Chen, Huipeng]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350108, Peoples R China;;[Chen, Huipeng]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China;;[Geng, Dechao]Tianjin Univ, Sch Sci, Dept Chem, Tianjin Key Lab Mol Optoelect Sci, Tianjin 300072, Peoples R China;;

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Source :

ADVANCED MATERIALS

ISSN: 0935-9648

Year: 2022

Issue: 3

Volume: 35

2 9 . 4

JCR@2022

2 7 . 4 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:91

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 27

SCOPUS Cited Count: 27

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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