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author:

Huang, Youzhang (Huang, Youzhang.) [1] | Lin, Liang (Lin, Liang.) [2] | Zhang, Yinggan (Zhang, Yinggan.) [3] | Liu, Lie (Liu, Lie.) [4] | Sa, Baisheng (Sa, Baisheng.) [5] (Scholars:萨百晟) | Lin, Jie (Lin, Jie.) [6] | Wang, Laisen (Wang, Laisen.) [7] | Peng, Dong-Liang (Peng, Dong-Liang.) [8] | Xie, Qingshui (Xie, Qingshui.) [9]

Indexed by:

EI Scopus SCIE CSCD

Abstract:

The commercial viability of lithium-sulfur batteries is still challenged by the notorious lithium polysulfides (LiPSs) shuttle effect on the sulfur cathode and uncontrollable Li dendrites growth on the Li anode. Herein, a bi-service host with Co-Fe binary-metal selenide quantum dots embedded in three-dimensional inverse opal structured nitrogen-doped carbon skeleton (3DIO FCSe-QDs@NC) is elaborately designed for both sulfur cathode and Li metal anode. The highly dispersed FCSe-QDs with superb adsorptive-catalytic properties can effectively immobilize the soluble LiPSs and improve diffusion-conversion kinetics to mitigate the polysulfide-shutting behaviors. Simultaneously, the 3D-ordered porous networks integrated with abundant lithophilic sites can accomplish uniform Li deposition and homogeneous Li-ion flux for suppressing the growth of dendrites. Taking advantage of these merits, the assembled Li-S full batteries with 3DIO FCSe-QDs@NC host exhibit excellent rate performance and stable cycling ability (a low decay rate of 0.014% over 2,000 cycles at 2C). Remarkably, a promising areal capacity of 8.41 mAh cm(-2) can be achieved at the sulfur loading up to 8.50 mg cm(-2) with an ultra-low electrolyte/sulfur ratio of 4.1 mu L mg(-1). This work paves the bi-serve host design from systematic experimental and theoretical analysis, which provides a viable avenue to solve the challenges of both sulfur and Li electrodes for practical Li-S full batteries.

Keyword:

Dendrite-free Li anode Dual-functional host Fe2CoSe4 quantum dots Li-S full batteries Shuttle effect

Community:

  • [ 1 ] [Huang, Youzhang]Xiamen Univ, Coll Mat, Fujian Key Lab Surface & Interface Engn High Perfo, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China
  • [ 2 ] [Lin, Liang]Xiamen Univ, Coll Mat, Fujian Key Lab Surface & Interface Engn High Perfo, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China
  • [ 3 ] [Zhang, Yinggan]Xiamen Univ, Coll Mat, Fujian Key Lab Surface & Interface Engn High Perfo, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China
  • [ 4 ] [Liu, Lie]Xiamen Univ, Coll Mat, Fujian Key Lab Surface & Interface Engn High Perfo, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China
  • [ 5 ] [Lin, Jie]Xiamen Univ, Coll Mat, Fujian Key Lab Surface & Interface Engn High Perfo, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China
  • [ 6 ] [Wang, Laisen]Xiamen Univ, Coll Mat, Fujian Key Lab Surface & Interface Engn High Perfo, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China
  • [ 7 ] [Peng, Dong-Liang]Xiamen Univ, Coll Mat, Fujian Key Lab Surface & Interface Engn High Perfo, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China
  • [ 8 ] [Xie, Qingshui]Xiamen Univ, Coll Mat, Fujian Key Lab Surface & Interface Engn High Perfo, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China
  • [ 9 ] [Xie, Qingshui]Xiamen Univ, Shenzhen Res Inst, Shenzhen 518000, Peoples R China
  • [ 10 ] [Sa, Baisheng]Fuzhou Univ, Coll Mat Sci & Engn, Multiscale Computat Mat Facil, Fuzhou 350100, Peoples R China

Reprint 's Address:

  • [Wang, Laisen]Xiamen Univ, Coll Mat, Fujian Key Lab Surface & Interface Engn High Perfo, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China;;[Peng, Dong-Liang]Xiamen Univ, Coll Mat, Fujian Key Lab Surface & Interface Engn High Perfo, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China;;[Xie, Qingshui]Xiamen Univ, Coll Mat, Fujian Key Lab Surface & Interface Engn High Perfo, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China;;[Xie, Qingshui]Xiamen Univ, Shenzhen Res Inst, Shenzhen 518000, Peoples R China;;

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Source :

NANO-MICRO LETTERS

ISSN: 2311-6706

CN: 31-2103/TB

Year: 2023

Issue: 1

Volume: 15

3 1 . 6

JCR@2023

3 1 . 6 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:49

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 40

SCOPUS Cited Count: 41

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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