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author:

Sun, W. (Sun, W..) [1] | Cheng, H. (Cheng, H..) [2] | Zhang, J. (Zhang, J..) [3] | Fang, X. (Fang, X..) [4] | Chen, W. (Chen, W..) [5] | Zhu, J. (Zhu, J..) [6] | Zheng, Y. (Zheng, Y..) [7]

Indexed by:

Scopus

Abstract:

The direct hybridization of Pt and g-C3N4 generally forms a Schottky barrier between the two components, which unavoidably hinders the migration of photogenerated electrons from g-C3N4 to the Pt cocatalyst. Herein, we report the first efficient allochroic Pt/g-C3N4 photocatalyst that can form an ohmic contact through photoconversion of semiconducting g-C3N4 to metalloid, accompanied with the charge carrier storage and photocatalyst color change, which is proved experimentally and theoretically. Through intermittent exposure of Pt/g-C3N4 photocatalyst to air for a few minutes during photocatalysis, the photocatalyst shows the highest hydrogen evolution performances. The ohmic contacts greatly promote the electron transfer from the semiconducting g-C3N4 to the Pt cocatalyst driven by the built-in electric field. In addition, the mechanism for the photocatalyst deactivation and activation is presented. The compositional tuning of the allochroic g-C3N4 through light irradiation and exposure to air can control over the photocatalytic activity and long-term stability for hydrogen evolution. This report for the first time unveils the deactivation and regeneration mechanisms of SCN. © 2023 The Author(s)

Keyword:

Carbon nitrides Hydrogen production Ohmic contact Photocatalysis Schottky barrier

Community:

  • [ 1 ] [Sun, W.]College of Chemistry, Fuzhou University, Fuzhou, 350116, China
  • [ 2 ] [Sun, W.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 3 ] [Sun, W.]Department of Chemistry – Ångstrom Laboratory, Uppsala University, Uppsala, SE-751 21, Sweden
  • [ 4 ] [Cheng, H.]College of Chemistry, Fuzhou University, Fuzhou, 350116, China
  • [ 5 ] [Cheng, H.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 6 ] [Zhang, J.]College of Chemistry, Fuzhou University, Fuzhou, 350116, China
  • [ 7 ] [Fang, X.]College of Chemistry, Fuzhou University, Fuzhou, 350116, China
  • [ 8 ] [Fang, X.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 9 ] [Chen, W.]College of Chemistry, Fuzhou University, Fuzhou, 350116, China
  • [ 10 ] [Zhu, J.]Department of Chemistry – Ångstrom Laboratory, Uppsala University, Uppsala, SE-751 21, Sweden
  • [ 11 ] [Zhu, J.]The Key Laboratory for Ultrafine Materials of The Ministry of Education, East China University of Science and Technology, Shanghai, 200237, China
  • [ 12 ] [Zheng, Y.]College of Chemistry, Fuzhou University, Fuzhou, 350116, China
  • [ 13 ] [Zheng, Y.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China

Reprint 's Address:

  • [Zhu, J.]Department of Chemistry – Ångstrom Laboratory, Sweden

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Source :

Chemical Engineering Journal

ISSN: 1385-8947

Year: 2023

Volume: 462

1 3 . 4

JCR@2023

1 3 . 4 0 0

JCR@2023

ESI HC Threshold:35

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 4

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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