Developing　Ohmic　contact　systems　or　achieving　low　contact　resistance　is　significant　for　high-performance　semiconductor　devices.　This　work　comprehensively　investigates　the　interfacial　properties　of　CrX2N4　(X　=　C,　Si)　based　field-effect　transistors　(FETs)　with　different　metal　(Ag,　Au,　Cu,　Ni,　Pd,　Pt,　Ti,　and　graphene)　electrodes　by　using　electronic　structure　calculations　and　quantum　transport　simulations.　It　is　highlighted　that　the　stronger　interlayer　coupling　allows　CrC2N4　to　form　an　n-type　Ohmic　contact　with　Ti　electrode　in　the　vertical　direction.　Furthermore,　the　absence　of　tunneling　barrier　at　the　CrC2N4-Ti　interface　greatly　improves　the　electron　injection　efficiency.　On　the　other　hand,　the　studied　metals　form　Schottky　contact　with　CrC2N4　at　the　lateral　interface　due　to　Fermi　level　pinning　(FLP)　effects.　Surprisingly,　the　strong　FLP　effects　restrict　the　Schottky　barrier　heights　of　CrSi2N4-metal　contacts　to　a　narrow　range.　Where　Ag,　Au,　Ni,　Pd,　Pt,　Ti　electrodes　and　Ag,　Ti　electrodes　form　ideal　ohmic　contact　with　CrSi2N4　in　the　vertical　and　lateral　directions,　respectively,　while　the　other　metals　form　quasi-ohmic　contact.　Ti　exhibits　the　highest　contact　performance　as　the　electrode　in　both　CrC2N4　and　CrSi2N4　based　FETs.　The　findings　may　provide　fundamental　understanding　for　designing　high-performance　and　energy-efficient　FETs　based　on　CrX2N4.