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author：

Zhao, H. (Zhao, H..) [1] | Hu, H. (Hu, H..) [2] | Zheng, J. (Zheng, J..) [3] | Qie, Y. (Qie, Y..) [4] | Yu, K. (Yu, K..) [5] | Zhu, Y. (Zhu, Y..) [6] | Luo, Z. (Luo, Z..) [7] | Lin, L. (Lin, L..) [8] | Yang, K. (Yang, K..) [9] | Guo, T. (Guo, T..) [10] | Li, F. (Li, F..) [11]

Indexed by：

Scopus

Abstract：

With　tunable　emission　in　the　full　visible　region,　the　ecofriendly　InP　quantum　dots　(QDs)　show　unique　application　prospects　in　light-emitting　devices.　At　present,　InP　QDs　suffer　from　wide-bandwidth　emission,　especially　for　electroluminescence　(EL),　which　hinders　their　applications　in　high-performance　display　devices.　Here,　we　report　a　facile　one-pot　synthesis　of　narrow-bandwidth　InP/ZnSeS/ZnS　QDs　using　a　safe　phosphorus　source　of　tris(dimethylamino)phosphine,　in　which　the　ZnSeS　inner-shell　layer　is　formed　via　temperature-gradient　solution　growth　from　240　to　280　°C.　The　synthesized　green　QDs　have　a　high　photoluminescence　quantum　yield　(PLQY)　of　91%　and　full　width　at　half-maximum　(fwhm)　of　36　nm.　Moreover,　the　resultant　quantum　dot　light-emitting　devices　(QLEDs)　also　show　a　narrow　fwhm　of　42　nm,　which　is　the　narrowest　emission　of　green　InP　QLEDs　based　on　a　safe　phosphorus　source　reported　so　far.　Further　modulation　of　the　electron　injection　into　the　device　by　inserting　a　thin　layer　of　lithium　fluoride　results　in　a　peak　external　quantum　efficiency　of　5.56%.　©　2023　American　Chemical　Society.

Keyword：

aminophosphine color purity electroluminescence indium phosphide quantum dots

Community：

  • [ 1 ] [Zhao, H.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 2 ] [Hu, H.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 3 ] [Hu, H.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 4 ] [Zheng, J.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 5 ] [Qie, Y.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 6 ] [Yu, K.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 7 ] [Zhu, Y.]Manufacturing and Electronic Engineering, Wenzhou University of Technology, Wenzhou, 325035, China
  • [ 8 ] [Luo, Z.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 9 ] [Lin, L.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 10 ] [Lin, L.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 11 ] [Yang, K.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 12 ] [Guo, T.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 13 ] [Guo, T.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 14 ] [Li, F.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 15 ] [Li, F.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China

Reprint 's Address：

  • [Hu, H.]Institute of Optoelectronic Technology, China;;[Li, F.]Institute of Optoelectronic Technology, China

Email：


huhl@fzu.edu.cn |
fsli@fzu.edu.cn
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Source ：

ACS Applied Nano Materials

ISSN： 2574-0970

Year： 2023

Issue： 5

Volume： 6

Page： 3797-3802

5 . 3

JCR@2023

5 . 3 0 0

JCR@2023

ESI HC Threshold：49

JCR Journal Grade：2

CAS Journal Grade：3

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 3

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 2

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