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author:

Sun, Q. (Sun, Q..) [1] | Tang, J. (Tang, J..) [2] | Zhang, C. (Zhang, C..) [3] | Li, Y. (Li, Y..) [4] | Xie, W. (Xie, W..) [5] | Deng, H. (Deng, H..) [6] (Scholars:邓辉) | Zheng, Q. (Zheng, Q..) [7] | Wu, J. (Wu, J..) [8] | Cheng, S. (Cheng, S..) [9]

Indexed by:

Scopus

Abstract:

Flexible CZTSSe solar cells have attracted much attention due to their earth-abundant elements, high stability, and wide application prospects. However, the environmental problems caused by the high toxicity of the Cd in the buffer layers restrict the development of flexible CZTSSe solar cells. Herein, we develop a Cd-free flexible CZTSSe/ZnO solar cell. The influences of the ZnO films on device performances are investigated. The light absorption capacity of flexible CZTSSe solar cells is enhanced due to the removal of the CdS layer. The optimal thickness of the ZnO buffer layers and the appropriate annealing temperature of the CZTSSe/ZnO are 100 nm and 200 °C. Ultimately, the optimum flexible CZTSSe/ZnO device achieves an efficiency of 5.0%, which is the highest efficiency for flexible CZTSSe/ZnO solar cells. The systematic characterizations indicate that the flexible CZTSSe/ZnO solar cells based on the optimal conditions achieved quality heterojunction, low defect density and better charge transfer capability. This work provides a new strategy for the development of the environmentally friendly and low-cost flexible CZTSSe solar cells. © 2023 by the authors.

Keyword:

buffer layer optimization Cd-free flexible CZTSSe/ZnO solar cells CZTSSe/ZnO heterojunction ZnO buffer layer

Community:

  • [ 1 ] [Sun Q.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 2 ] [Sun Q.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 3 ] [Tang J.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 4 ] [Zhang C.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 5 ] [Zhang C.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 6 ] [Zhang C.]Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou, 213164, China
  • [ 7 ] [Li Y.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 8 ] [Li Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 9 ] [Xie W.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 10 ] [Xie W.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 11 ] [Deng H.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 12 ] [Deng H.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 13 ] [Zheng Q.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 14 ] [Zheng Q.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 15 ] [Wu J.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 16 ] [Wu J.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 17 ] [Cheng S.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
  • [ 18 ] [Cheng S.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 19 ] [Cheng S.]Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou, 213164, China

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Materials

ISSN: 1996-1944

Year: 2023

Issue: 7

Volume: 16

3 . 1

JCR@2023

3 . 1 0 0

JCR@2023

ESI HC Threshold:49

JCR Journal Grade:1

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 10

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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