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author:

Ding, Xueda (Ding, Xueda.) [1] | Huang, Yuxin (Huang, Yuxin.) [2] | Chen, Dongyang (Chen, Dongyang.) [3] | Xie, Zailai (Xie, Zailai.) [4] (Scholars:谢在来)

Indexed by:

EI Scopus SCIE CSCD

Abstract:

Constructing heterojunction interface as an active catalyst is an effective strategy to boost electrocatalytic activity of oxygen evolution reaction (OER). Herein, we report an interfacial CoP/CeO2 heterostructure catalyst constructed by interface engineering and selective phosphorization procedure. X-ray photo-electron spectroscopy (XPS) suggests that coupling CeO2 nanoparticles on the surface of CoP will generate interfacial interaction at the two-phase interface, resulting in electron transfer between CoP and CeO2 components at the interface. Benefitting from the interfacial interaction, large exposed inter-face area, and luxuriant mesopores structure, CoP/CeO2 shows fascinating alkaline OER performance. At the current densities of 10 and 50 mA cm-2, the optimal CoP/CeO2 heterojunction exhibits lower overpotential (257 and 298 mV) than either CoP (288 and 354 mV) or RuO2 (305 and 409 mV). This work provides a facile synthetic protocol for constructing heterostructure interfaces to improve OER performance.(c) 2023 Chinese Society of Particuology and Institute of Process Engineering, Chinese Academy of Sciences. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http:// creativecommons.org/licenses/by-nc-nd/4.0/).

Keyword:

CeO2 CeO2 nanoparticles CoP Oxygen evolution reaction Prussian blue analogue

Community:

  • [ 1 ] [Huang, Yuxin]Fuzhou Univ, Coll Chem, Fuzhou 350116, Peoples R China
  • [ 2 ] [Xie, Zailai]Fuzhou Univ, Coll Chem, Fuzhou 350116, Peoples R China
  • [ 3 ] [Ding, Xueda]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350116, Peoples R China
  • [ 4 ] [Chen, Dongyang]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350116, Peoples R China

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Source :

PARTICUOLOGY

ISSN: 1674-2001

CN: 11-5671/O3

Year: 2023

Volume: 81

Page: 38-44

4 . 1

JCR@2023

4 . 1 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:49

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 8

SCOPUS Cited Count: 9

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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