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author:

Iqbal, Obaid (Iqbal, Obaid.) [1] | Ali, Hamid (Ali, Hamid.) [2] | Li, Nian (Li, Nian.) [3] | Al-Sulami, Ahlam I. (Al-Sulami, Ahlam I..) [4] | Alshammari, Khaled F. (Alshammari, Khaled F..) [5] | Abd-Rabboh, Hisham S. M. (Abd-Rabboh, Hisham S. M..) [6] | Al-Hadeethi, Yas (Al-Hadeethi, Yas.) [7] | Din, Israf Ud (Din, Israf Ud.) [8] | Alharthi, Abdulrahman I. (Alharthi, Abdulrahman I..) [9] | Altamimi, Rashid (Altamimi, Rashid.) [10] | Zada, Amir (Zada, Amir.) [11] | Wang, Zhenyang (Wang, Zhenyang.) [12] | Hayat, Asif (Hayat, Asif.) [13] | Ansari, Mohd Zahid (Ansari, Mohd Zahid.) [14]

Indexed by:

EI Scopus SCIE

Abstract:

Graphitic carbon nitride (g-C3N4) is a non-metallic semiconductor, that has received enormous interest in the research area of energy conversion and storage due to its several exceptional characteristics such as moderate bandgap, high thermal and chemical stability, cost-effectiveness, and perfect conduction and valence band po-sition. Nevertheless, the catalytic performance of g-C3N4 is considerably constrained owing to its low solar light absorption, small surface area, and quick photoinduced charge recombination. Enormous studies have been dedicated to the optimization of photoresponsive efficiency through structure engineering, resulting in a variety of techniques for achieving productive photoresponsive applications based on a perspective of the photoexci-tation mechanisms and structural characteristics of the exciting polymeric framework. This review examines the impact of vacancy defects within g-C3N4 such as carbon vacancies (CVs), nitrogen vacancies (NVs), amino va-cancies, a combination of cyano groups with narrow optical gap materials, bandgap engineering, upconversion materials, plasmonic materials, and photosensitizers have been briefly described. In addition, numerous analyzing techniques such as microscopic, elemental, and computational characterizations have been summed up and investigated. Significantly, this review also describes the physicochemical features of g-C3N4 and highlights the synthetic procedures for g-C3N4 morphology including thermal oxidation etching, chemical exfoliation, ultrasonication-assisted liquid phase exfoliation, chemical vapor deposition, etc. Moreover, the universal opti-mization methodologies for the synthesis of advanced photoresponsive materials, the optimistic light between structural variables, and photoexcitation mechanisms in g-C3N4-based materials have been explored. Further-more, the rational development and sustainable fabrications of g-C3N4-based materials for a wide range of applications in energy conversion and storage, such as photocatalytic H2 evolution, photocatalytic O2 evolution, photocatalytic overall water splitting, photoreduction of CO2 source, electrocatalytic H2 evolution, O2 evolution,O2 reduction, alkali-metal ion batteries, lithium-metal batteries, lithium-sulfur batteries, metal-air batteries, and supercapacitors have been discussed in detail. In the end, the future challenges and opportunities with a brief discussion on the developments of novel g-C3N4-based materials have been concluded.

Keyword:

Graphitic Carbon Nitride Microscopic Characterization Physicochemical Properties Potential Applications Vacancies Defects

Community:

  • [ 1 ] [Iqbal, Obaid]Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Anhui, Peoples R China
  • [ 2 ] [Li, Nian]Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Anhui, Peoples R China
  • [ 3 ] [Wang, Zhenyang]Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Anhui, Peoples R China
  • [ 4 ] [Iqbal, Obaid]Chinese Acad Sci, Hefei Inst Phys Sci, Key Lab Photovolta & Energy Conservat Mat, Hefei 230031, Peoples R China
  • [ 5 ] [Li, Nian]Chinese Acad Sci, Hefei Inst Phys Sci, Key Lab Photovolta & Energy Conservat Mat, Hefei 230031, Peoples R China
  • [ 6 ] [Wang, Zhenyang]Chinese Acad Sci, Hefei Inst Phys Sci, Key Lab Photovolta & Energy Conservat Mat, Hefei 230031, Peoples R China
  • [ 7 ] [Ali, Hamid]Fuzhou Univ, Coll Mat Sci & Engn, Key Lab Ecomat Adv Technol, Multiscale Computat Mat Facil, Fuzhou 350100, Peoples R China
  • [ 8 ] [Al-Sulami, Ahlam I.]Univ Jeddah, Coll Sci, Dept Chem, Jeddah 21589, Saudi Arabia
  • [ 9 ] [Alshammari, Khaled F.]King Fahad Secur Coll, Dept Criminal Justice & Forens, Riyadh 11461, Saudi Arabia
  • [ 10 ] [Abd-Rabboh, Hisham S. M.]King Khalid Univ, Fac Sci, Chem Dept, POB 9004, Abha 61413, Saudi Arabia
  • [ 11 ] [Al-Hadeethi, Yas]King Abdulaziz Univ, Fac Sci, Phys Dept, Jeddah 21589, Saudi Arabia
  • [ 12 ] [Al-Hadeethi, Yas]King Abdulaziz Univ, Lithog Devices Fabricat & Dev Res Grp, Deanship Sci Res, Jeddah 21589, Saudi Arabia
  • [ 13 ] [Din, Israf Ud]Prince Sattam bin Abdulaziz Univ, Coll Sci & Humanities, Dept Chem, Al Kharj 16278, Saudi Arabia
  • [ 14 ] [Alharthi, Abdulrahman I.]Prince Sattam bin Abdulaziz Univ, Coll Sci & Humanities, Dept Chem, Al Kharj 16278, Saudi Arabia
  • [ 15 ] [Altamimi, Rashid]King Abdulaziz City Sci & Technol, Riyadh 12354, Saudi Arabia
  • [ 16 ] [Zada, Amir]Abdul Wali Khan Univ Mardan, Dept Chem, Khyber Pakhtunkhwa 23200, Pakistan
  • [ 17 ] [Hayat, Asif]Zhejiang Normal Univ, Coll Chem & Life Sci, Jinhua 321004, Zhejiang, Peoples R China
  • [ 18 ] [Hayat, Asif]Zhejiang Normal Univ, Coll Geog & Environm Sci, Jinhua 321004, Peoples R China
  • [ 19 ] [Ansari, Mohd Zahid]Yeungnam Univ, Sch Mat Sci & Engn, Gyongsan 712749, South Korea

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Source :

MATERIALS TODAY PHYSICS

ISSN: 2542-5293

Year: 2023

Volume: 34

1 0 . 0

JCR@2023

1 0 . 0 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:49

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 105

SCOPUS Cited Count: 104

ESI Highly Cited Papers on the List: 6 Unfold All

  • 2025-1
  • 2024-11
  • 2024-9
  • 2024-7
  • 2024-5
  • 2024-3

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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