Semiconductor　heterostructures　effectively　promote　thetransferand　separation　of　interfacial　photoinduced　charges　for　the　photocatalyticprocess.　Herein,　we　constructed　a　direct　Z-scheme　SnSe2/CdS　heterojunction　photocatalyst.　N-type　SnSe2　semiconductorsare　suitable　candidate　materials　for　oxidation　half-reactions　in　Z-schemeheterojunctions.　The　intimate　atomic-level　interfacial　contact　throughCd-Se　bonds　provides　a　better　interfacial　charge　transportchannel　for　the　photoinduced　charges.　Moreover,　the　transient　Sn4+/Sn-0　centers　caused　by　the　photoredox　processboost　the　interfacial　charge　transport/separation　at　the　interface.Besides,　the　presence　of　S　vacancies　acting　as　electron　enrichmentcenters　further　enhances　the　redox　ability　for　hydrogen　production.Therefore,　the　SnSe2/CdS　heterostructure　showed　a　superiorvisible-light　photocatalytic　H-2-production　activity　of13.6　mmol　&　BULL;g(-1)&　BULL;h(-1)　usingascorbic　acid　as　a　sacrificial　agent,　which　is　9.7　times　higher　thanthat　of　pristine　CdS.　The　apparent　quantum　yield　reaches　10.5%　at　&　lambda;　=　420　nm.　This　work　provides　a　useful　way　to　improve　chargetransfer　in　the　Z-scheme　heterojunction　photocatalyst　for　hydrogenproduction.