Semiconductor　heterostructures　effectively　promote　the　transfer　and　separation　of　interfacial　photoinduced　charges　for　the　photocatalytic　process.　Herein,　we　constructed　a　direct　Z-scheme　SnSe2/CdS　heterojunction　photocatalyst.　N-type　SnSe2　semiconductors　are　suitable　candidate　materials　for　oxidation　half-reactions　in　Z-scheme　heterojunctions.　The　intimate　atomic-level　interfacial　contact　through　Cd-Se　bonds　provides　a　better　interfacial　charge　transport　channel　for　the　photoinduced　charges.　Moreover,　the　transient　Sn4+/Sn0　centers　caused　by　the　photoredox　process　boost　the　interfacial　charge　transport/separation　at　the　interface.　Besides,　the　presence　of　S　vacancies　acting　as　electron　enrichment　centers　further　enhances　the　redox　ability　for　hydrogen　production.　Therefore,　the　SnSe2/CdS　heterostructure　showed　a　superior　visible-light　photocatalytic　H2-production　activity　of　13.6　mmol·g-1·h-1　using　ascorbic　acid　as　a　sacrificial　agent,　which　is　9.7　times　higher　than　that　of　pristine　CdS.　The　apparent　quantum　yield　reaches　10.5%　at　λ　=　420　nm.　This　work　provides　a　useful　way　to　improve　charge　transfer　in　the　Z-scheme　heterojunction　photocatalyst　for　hydrogen　production.　©　2023　American　Chemical　Society