Effects of Dopants on Scratch Responses of Diamond-Like Carbon Films by Rockwell C Diamond Indenter - Details

author：

Liu, M. (Liu, M..) ^[1] | Xu, Z. (Xu, Z..) ^[2] | Zhang, G. (Zhang, G..) ^[3]

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Abstract：

Micro-scratch　responses　of　diamond-like　carbon　(DLC)　films　deposited　with　different　dopants　(i.e.,　Si,　Cr,　and　H)　were　investigated　by　Rockwell　C　diamond　indenter　under　progressive　normal　load　linearly　increasing　from　5 mN　to　15 N.　Three　critical　loads　can　be　identified　from　residual　scratch　morphology　according　to　different　periodic　and　symmetrical　damage　patterns.　The　results　under　small　loads　show:　The　addition　of　H　can　enhance　normal　contact　and　residual　hardness　of　DLC　films.　Fracture　toughness　of　both　film　and　film/substrate　system　can　be　quantified　by　scratch-based　linear　elastic　fracture　mechanics.　H-DLC　film　exhibits　the　smallest　fracture　toughness,　and　Si-DLC　and　Cr-DLC　films　have　larger　fracture　toughness　and　critical　loads　than　pure　DLC　film.　©　2022,　ASM　International.

Keyword：

critical loads DLC films effects of dopants fracture micro-scratch Rockwell C indenter

Community：

[ 1 ] [Liu M.]Fujian Provincial Key Laboratory of Terahertz Functional Devices and Intelligent Sensing, School of Mechanical Engineering and Automation, Fuzhou University, Qishan Campus, Fujian, Fuzhou, 350116, China
[ 2 ] [Xu Z.]Fujian Provincial Key Laboratory of Terahertz Functional Devices and Intelligent Sensing, School of Mechanical Engineering and Automation, Fuzhou University, Qishan Campus, Fujian, Fuzhou, 350116, China
[ 3 ] [Zhang G.]State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000, China
[ 4 ] [Zhang G.]Institute of Nanomaterials Application Technology, Gansu Academy of Science, Lanzhou, 730000, China
[ 5 ] [Zhang G.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China

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Source ：

Journal of Materials Engineering and Performance

ISSN： 1059-9495

Year： 2023

Issue： 13

Volume： 32

Page： 6092-6106

2 . 2

JCR@2023

2 . 2 0 0

JCR@2023

ESI HC Threshold：49

JCR Journal Grade：3

CAS Journal Grade：4

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count： 4

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 4

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