The　integration　of　hydrogen-bonded　organic　frameworks　(HOFs)　into　electronic　devices　holds　great　promise　due　to　their　high　crystallinity,　intrinsic　porosity,　and　easy　regeneration.　However,　despite　their　potential,　the　utilization　of　HOFs　in　electronic　devices　remains　largely　unexplored,　primarily　due　to　the　challenges　associated　with　fabricating　high-quality　films.　Herein,　a　controlled　synthesis　of　HOF　nanofilms　with　smooth　surface,　good　crystallinity,　and　high　orientation　is　achieved　using　a　solution-processed　approach.　The　memristors　exhibit　outstanding　bipolar　switching　performance　with　a　low　set　voltage　of　0.86　V,　excellent　retention　of　1.64　x　104　s,　and　operational　endurance　of　60　cycles.　Additionally,　these　robust　memristors　display　remarkable　thermal　stability,　maintaining　their　performance　even　at　elevated　temperatures　of　up　to　200　degrees　C.　More　strikingly,　scratched　HOF　films　can　be　readily　regenerated　through　a　simple　solvent　rinsing　process,　enabling　their　reuse　for　the　fabrication　of　new　memristors,　which　is　difficult　to　achieve　with　traditional　resistive　switching　materials.　Additionally,　a　switching　mechanism　based　on　the　reversible　formation　and　annihilation　of　conductive　filaments　is　revealed.　This　work　provides　novel　and　invaluable　insights　that　have　a　significant　impact　on　advancing　the　widespread　adoption　of　HOFs　as　active　layers　in　electronic　devices.　High-quality　hydrogen-bonded　organic　framework　(HOF)　nanofilms　with　smooth　surface,　good　crystallinity,　and　high　orientation　are　successfully　fabricated　and　employed　in　resistive　memory　devices.　The　resulting　memristors　demonstrate　excellent　switching　behavior.　More　strikingly,　the　scratched　HOF　film　can　be　readily　regenerated　through　a　simple　solvent　rinsing　process,　enabling　their　reuse　for　the　fabrication　of　new　memristors.image