The　etch　damage　caused　by　the　conventional　bench-top　etching　process　makes　it　difficult　to　produce　Nano-LED　devices.　Recently,　some　scholars　have　studied　the　use　of　ion　injection　to　achieve　electrical　isolation　between　pixels　for　the　purpose　of　pixelation.　In　this　paper,　we　focus　on　the　distribution　characteristics　of　ions　in　GaN　targets　to　improve　the　effective　light-emitting　area　ratio　of　devices　by　reducing　the　lateral　diffusion　effect　of　ions.　©　2023,　John　Wiley　and　Sons　Inc.　All　rights　reserved.