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author：

Yang, Yanduan (Yang, Yanduan.) [1] | Tu, Jinliang (Tu, Jinliang.) [2] | Zhan, Guangxing (Zhan, Guangxing.) [3] | Liu, Haipeng (Liu, Haipeng.) [4] | Fan, Xiaoyu (Fan, Xiaoyu.) [5] | Chen, Xin (Chen, Xin.) [6] | Hu, Xiaolin (Hu, Xiaolin.) [7] | Zhuang, Naifeng (Zhuang, Naifeng.) [8]

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EI

Abstract：

Bi3+-doped　iron　garnet　crystals　(Bi:RIG)　have　received　extensive　attention　for　their　excellent　magneto-optical　properties.　The　quality　of　garnet　crystals　has　a　great　relationship　with　mismatch　in　the　lattice　and　thermal　expansion　between　crystals　and　seeds.　Compared　with　TGG　seeds,　Sc,Ga:YIG　is　more　suitable　as　the　seed　for　growing　Bi:(HoEu)IG　crystals.　The　crystal　quality　and　match　in　the　lattice　and　thermal　expansion　have　been　discussed.　The　as-grown　Bi:(HoEu)IG　crystal　has　a　specific　Faraday　rotation　angle　of　−467°　cm-1　and　shows　a　strong　magneto-optical　effect.　©　2023　American　Chemical　Society.

Keyword：

Bismuth Garnets Iron Lattice mismatch Optical lattices Optical properties Rare earths Thermal expansion

Community：

  • [ 1 ] [Yang, Yanduan]College of Chemistry, Fuzhou University, Fuzhou; 350108, China
  • [ 2 ] [Tu, Jinliang]College of Chemistry, Fuzhou University, Fuzhou; 350108, China
  • [ 3 ] [Zhan, Guangxing]College of Chemistry, Fuzhou University, Fuzhou; 350108, China
  • [ 4 ] [Liu, Haipeng]College of Chemistry, Fuzhou University, Fuzhou; 350108, China
  • [ 5 ] [Fan, Xiaoyu]College of Chemistry, Fuzhou University, Fuzhou; 350108, China
  • [ 6 ] [Chen, Xin]College of Chemistry, Fuzhou University, Fuzhou; 350108, China
  • [ 7 ] [Chen, Xin]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 8 ] [Hu, Xiaolin]College of Chemistry, Fuzhou University, Fuzhou; 350108, China
  • [ 9 ] [Hu, Xiaolin]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 10 ] [Zhuang, Naifeng]College of Chemistry, Fuzhou University, Fuzhou; 350108, China
  • [ 11 ] [Zhuang, Naifeng]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China

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Source ：

Crystal Growth and Design

ISSN： 1528-7483

Year： 2023

Issue： 3

Volume： 23

Page： 1598-1602

3 . 2

JCR@2023

3 . 2 0 0

JCR@2023

JCR Journal Grade：1

CAS Journal Grade：1

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 6

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 2

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