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author:

Huang, Ruting (Huang, Ruting.) [1] | Wang, Lijun (Wang, Lijun.) [2] | Zhang, Qian (Zhang, Qian.) [3] | Chen, Zhiwen (Chen, Zhiwen.) [4] | Li, Zhen (Li, Zhen.) [5] | Pan, Dengyu (Pan, Dengyu.) [6] | Zhao, Bing (Zhao, Bing.) [7] | Wu, Minghong (Wu, Minghong.) [8] (Scholars:吴明红) | Wu, C. M. Lawrence (Wu, C. M. Lawrence.) [9] | Shek, Chan-Hung (Shek, Chan-Hung.) [10]

Indexed by:

SCIE

Abstract:

Tin dioxide (SnO2) and graphene are unique strategic functional materials with widespread technological applications, particularly in the areas of solar batteries, optoelectronic devices, and solid-state gas sensors owing to advances in optical and electronic properties. Versatile strategies for microstructural evolution and related performance of SnO2 and graphene composites are of fundamental importance in the development of electrode materials. Here we report that a novel composite, SnO2 quantum dots (QDs) supported by graphene nanosheets (GNSs), has been prepared successfully by a simple hydrothermal method and electron-beam irradiation (EBI) strategies. Microstructure analysis indicates that the EBI technique can induce the exfoliation of GNSs and increase their interlayer spacing, resulting in the increase of ENS amorphization, disorder, and defects and the removal of partial oxygen-containing functional groups on the surface of GNSs. The investigation of SnO2 nanoparticles supported by GNSs (SnO2/GNSs) reveals that the GNSs are loaded with SnO2 QDs, which are dispersed uniformly on both sides of GNSs. Interestingly, the electrochemical performance of SnO2/GNSs indicates that SnO2 QDs supported by a 210 kGy irradiated ENS shows excellent cycle response, high specific capacity, and high reversible capacity. This novel SnO2/GNS composite has potential practical applications in SnO2 electrode materials during Li+ insertion/extraction.

Keyword:

electrochemical performance electron-beam irradiation graphene nanosheets microstructural evolution SnO2 quantum dots

Community:

  • [ 1 ] [Huang, Ruting]Shanghai Univ, Shanghai Appl Radiat Inst, Shanghai 200444, Peoples R China
  • [ 2 ] [Wang, Lijun]Shanghai Univ, Shanghai Appl Radiat Inst, Shanghai 200444, Peoples R China
  • [ 3 ] [Zhang, Qian]Shanghai Univ, Shanghai Appl Radiat Inst, Shanghai 200444, Peoples R China
  • [ 4 ] [Chen, Zhiwen]Shanghai Univ, Shanghai Appl Radiat Inst, Shanghai 200444, Peoples R China
  • [ 5 ] [Li, Zhen]Shanghai Univ, Shanghai Appl Radiat Inst, Shanghai 200444, Peoples R China
  • [ 6 ] [Zhao, Bing]Shanghai Univ, Shanghai Appl Radiat Inst, Shanghai 200444, Peoples R China
  • [ 7 ] [Wu, Minghong]Shanghai Univ, Shanghai Appl Radiat Inst, Shanghai 200444, Peoples R China
  • [ 8 ] [Pan, Dengyu]Shanghai Univ, Inst Nanochem & Nanobiol, Shanghai 200444, Peoples R China
  • [ 9 ] [Wu, Minghong]Shanghai Univ, Inst Nanochem & Nanobiol, Shanghai 200444, Peoples R China
  • [ 10 ] [Huang, Ruting]Shanghai Univ, Sch Environm & Chem Engn, Shanghai 200444, Peoples R China
  • [ 11 ] [Wang, Lijun]Shanghai Univ, Sch Environm & Chem Engn, Shanghai 200444, Peoples R China
  • [ 12 ] [Zhang, Qian]Shanghai Univ, Sch Environm & Chem Engn, Shanghai 200444, Peoples R China
  • [ 13 ] [Chen, Zhiwen]Shanghai Univ, Sch Environm & Chem Engn, Shanghai 200444, Peoples R China
  • [ 14 ] [Li, Zhen]Shanghai Univ, Sch Environm & Chem Engn, Shanghai 200444, Peoples R China
  • [ 15 ] [Pan, Dengyu]Shanghai Univ, Sch Environm & Chem Engn, Shanghai 200444, Peoples R China
  • [ 16 ] [Zhao, Bing]Shanghai Univ, Sch Environm & Chem Engn, Shanghai 200444, Peoples R China
  • [ 17 ] [Wu, Minghong]Shanghai Univ, Sch Environm & Chem Engn, Shanghai 200444, Peoples R China
  • [ 18 ] [Wu, C. M. Lawrence]City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon Tong, Hong Kong, Peoples R China
  • [ 19 ] [Shek, Chan-Hung]City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon Tong, Hong Kong, Peoples R China

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Source :

ACS NANO

ISSN: 1936-0851

Year: 2015

Issue: 11

Volume: 9

Page: 11351-11361

1 3 . 3 3 4

JCR@2015

1 5 . 8 0 0

JCR@2023

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 82

SCOPUS Cited Count: 82

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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