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author:

Chen, Zhiwen (Chen, Zhiwen.) [1] | Wu, Minghong (Wu, Minghong.) [2] (Scholars:吴明红) | Shek, Chan-Hung (Shek, Chan-Hung.) [3] | Wu, C. M. Lawrence (Wu, C. M. Lawrence.) [4] | Lai, Joseph K. L. (Lai, Joseph K. L..) [5]

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SCIE

Abstract:

Tin oxide materials are a class of unique semiconductor materials with widespread technological applications because of their valuable semiconducting, gas sensing, electrical and optical properties in the fields of macro/mesoscopic materials and micro/nanodevices. In this review, we describe the efforts toward understanding the synthetic strategies and formation mechanisms of the micro/nanostructures of various tin dioxide thin films prepared by pulsed laser ablation, highlighting contributions from our laboratory. First, we present the preparation and formation processes of tetragonal-phase tin dioxide thin films with interesting fractal clusters. In addition, the quantum-dot formation and dynamic scaling behavior in tetragonal-phase tin dioxide thin films induced by pulsed delivery will be discussed experimentally and theoretically. Finally, we emphasize the fabrication, properties and formation mechanism of orthorhombic-phase tin dioxide thin films by using pulsed laser deposition. This research may provide a novel approach to modulate their competent performance and promote rational design of micro/nanodevices. Once mastered, tin dioxide thin films with a variety of fascinating micro/nanostructures will offer vast and unforeseen opportunities in the semiconductor industry as well as in other fields of science and technology.

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Community:

  • [ 1 ] [Chen, Zhiwen]Shanghai Univ, Shanghai Appl Radiat Inst, Shanghai 200444, Peoples R China
  • [ 2 ] [Wu, Minghong]Shanghai Univ, Shanghai Appl Radiat Inst, Shanghai 200444, Peoples R China
  • [ 3 ] [Chen, Zhiwen]Shanghai Univ, Sch Environm & Chem Engn, Shanghai 200444, Peoples R China
  • [ 4 ] [Wu, Minghong]Shanghai Univ, Sch Environm & Chem Engn, Shanghai 200444, Peoples R China
  • [ 5 ] [Chen, Zhiwen]City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
  • [ 6 ] [Shek, Chan-Hung]City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
  • [ 7 ] [Wu, C. M. Lawrence]City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
  • [ 8 ] [Lai, Joseph K. L.]City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

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Source :

CHEMICAL COMMUNICATIONS

ISSN: 1359-7345

Year: 2015

Issue: 7

Volume: 51

Page: 1175-1184

6 . 5 6 7

JCR@2015

4 . 3 0 0

JCR@2023

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 4

SCOPUS Cited Count: 4

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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