A　novel　method　has　been　developed　by　electron　beam　irradiation　to　prepare　SnO2　Nanorods　gas　nanosensor　materials.　2MeV　10mA　GJ-2-II　electronic　accelerator　was　applied　as　radiation　resource.　SnO2　nanorods　were　prepared　rapidly　at　room　temperature　under　atmospheric　pressure.　The　structure　and　morphology　of　prepared　SnO2　nanorods　were　analyzed　by　X-ray　diffraction,　transmission　electron　microscopy.　The　SnO2　nanorods　sensor　was　utilized　to　detect　CH3OH　and　HCHO　concentration.　The　results　indicated　that　the　obtained　materials　were　rutile　SnO2　nanorods　with　an　average　length　of　200　nm　without　any　impurity.　The　SnO2　nanorods　gas　sensor　with　good　performance　had　high　sensitivity,　fast　response,　quick　recovery　and　linear　dependence　of　the　sensitivity　on　the　concentration　of　CH3OH　and　HCHO　gas.　The　possible　mechanism　of　the　SnO2　growth　by　electron　beam　irradiation　method　was　proposed.