We　propose　a　novel　technology　called　depolarization　field　engineered　ferroelectric　mechanical　transistor　(Fe-MT),　which　achieves　an　exceptionally　low　operating　voltage　(V-DD)　of　0.3　volts.　This　achievement　of　VDD　scaling　is　made　possible　by　utilizing　depolarization　voltage　with　an　amplitude　of　11/-11.1　V　for　the　pre-shrinkage　of　contact　gap　(g(C))　[Fig.　1],　which　is　activated　by　a　+　63/-66　V　pulse　stimulus.　Additionally,　our　Fe-MTs　maintain　the　device　level　reconfigurability　between　N/P　modes.　This　exciting　development　suggests　that　our　Fe-MTs　can　serve　as　the　fundamental　building　blocks　for　future　generations　of　integrated　circuits　with　high　energy　and　area-efficiency.